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Category:CPC G11C16/102
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Pages in category "CPC G11C16/102"
The following 114 pages are in this category, out of 114 total.
1
- 17970315. APPARATUS WITH MULTI-BIT CELL READ MECHANISM AND METHODS FOR OPERATING THE SAME simplified abstract (Micron Technology, Inc.)
- 18205835. MEMORY DEVICE AND OPERATION THEREOF simplified abstract (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
- 18223358. GENERATION OF QUICK PASS WRITE BIASES IN A MEMORY DEVICE simplified abstract (WESTERN DIGITAL TECHNOLOGIES, INC.)
- 18229748. OPTIMIZED READ CURRENT CONSUMPTION BASED ON LOWER PAGE READ INFORMATION FOR NON-VOLATILE MEMORY APPARATUS (Western Digital Technologies, Inc.)
- 18237793. MEMORY DEVICE AND METHOD FOR PERFORMING CACHE PROGRAM ON MEMORY DEVICE simplified abstract (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
- 18330202. MEMORY DEVICE, PROGRAMMING METHOD OF MEMORY DEVICE, AND MEMORY SYSTEM simplified abstract (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
- 18382325. NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE HAVING THE SAME AND OPERATING METHOD OF NON-VOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18408126. STORAGE DEVICE AND METHOD OF OPERATING THE SAME (Samsung Electronics Co., Ltd.)
- 18409089. MEMORY DEVICE, OPERATION METHOD THEREOF, AND MEMORY SYSTEM (Yangtze Memory Technologies Co., Ltd.)
- 18411348. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SEMICONDUCTOR MEMORY DEVICE (SK hynix Inc.)
- 18411532. DRAIN-SIDE WORDLINE VOLTAGE BOOSTING TO REDUCE LATERAL ELECTRON FIELD DURING A PROGRAMMING OPERATION simplified abstract (Micron Technology, Inc.)
- 18423161. MEMORY DEVICE PERFORMING SIGNED MULTIPLICATION USING LOGICAL STATES OF MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 18423174. MEMORY DEVICE FOR SUMMATION OF OUTPUTS OF SIGNED MULTIPLICATIONS simplified abstract (Micron Technology, Inc.)
- 18423178. MEMORY DEVICE FOR SIGNED MULTI-BIT TO MULTI-BIT MULTIPLICATIONS simplified abstract (Micron Technology, Inc.)
- 18423181. MEMORY DEVICE FOR MULTIPLICATION USING MEMORY CELLS WITH DIFFERENT THRESHOLDS BASED ON BIT SIGNIFICANCE simplified abstract (Micron Technology, Inc.)
- 18426117. HYBRID DYNAMIC WORD LINE START VOLTAGE simplified abstract (Micron Technology, Inc.)
- 18451104. SEMICONDUCTOR MEMORY DEVICE FOR PERFORMING PROGRAM OPERATION simplified abstract (SK hynix Inc.)
- 18485353. MEMORY DEVICE AND MEMORY DEVICE OPERATING METHOD simplified abstract (Samsung Electronics Co., Ltd.)
- 18517903. WRITING USER DATA INTO STORAGE MEMORY simplified abstract (Micron Technology, Inc.)
- 18531563. METHOD OF OPERATING A MEMORY CONTROLLER, MEMORY CONTROLLER, AND MEMORY SYSTEM (Yangtze Memory Technologies Co., Ltd.)
- 18537344. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18596541. MEMORY DEVICE AND METHOD simplified abstract (Kioxia Corporation)
- 18601810. STORING ONE DATA VALUE BY PROGRAMMING A FIRST MEMORY CELL AND A SECOND MEMORY CELL simplified abstract (Micron Technology, Inc.)
- 18605169. RE-DRIVING DATA TO A SUB-BLOCK DURING PROGRAMMING OF MULTIPLE SUB-BLOCKS simplified abstract (Micron Technology, Inc.)
- 18666063. PROGRAMMING DELAY SCHEME FOR IN A MEMORY SUB-SYSTEM BASED ON MEMORY RELIABILITY simplified abstract (Micron Technology, Inc.)
- 18677536. BLOCK SELECTION CIRCUIT CONTROLLING SERIES CONNECTED PASS TRANSISTORS AND FLASH MEMORY INCLUDING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18725991. METHOD FOR OPERATING FERROELECTRIC-BASED THREE-DIMENSIONAL FLASH MEMORY INCLUDING DATA STORAGE PATTERN (Samsung Electronics Co., Ltd.)
- 18733520. MEMORY DEVICE USING MULTI-PILLAR MEMORY CELLS FOR MATRIX VECTOR MULTIPLICATION (Micron Technology, Inc.)
- 18755062. PERFORMING DATA INTEGRITY CHECKS TO IDENTIFY DEFECTIVE WORDLINES simplified abstract (Micron Technology, Inc.)
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- MACRONIX INTERNATIONAL CO., LTD. Patent Application Trends in 2024
- Macronix International Co., Ltd. Patent Application Trends in 2025
- MACRONIX INTERNATIONAL CO., LTD. Patent Application Trends in 2025
- Micron technology, inc. (20240203507). MANAGING ALLOCATION OF BLOCKS IN A MEMORY SUB-SYSTEM simplified abstract
- Micron technology, inc. (20240233828). APPARATUS WITH MULTI-BIT CELL READ MECHANISM AND METHODS FOR OPERATING THE SAME simplified abstract
- Micron technology, inc. (20240249776). DRAIN-SIDE WORDLINE VOLTAGE BOOSTING TO REDUCE LATERAL ELECTRON FIELD DURING A PROGRAMMING OPERATION simplified abstract
- Micron technology, inc. (20240249777). STORING ONE DATA VALUE BY PROGRAMMING A FIRST MEMORY CELL AND A SECOND MEMORY CELL simplified abstract
- Micron technology, inc. (20240265973). ALGORITHM QUALIFIER COMMANDS simplified abstract
- Micron technology, inc. (20240282381). HYBRID DYNAMIC WORD LINE START VOLTAGE simplified abstract
- Micron technology, inc. (20240304252). MEMORY DEVICE PERFORMING SIGNED MULTIPLICATION USING LOGICAL STATES OF MEMORY CELLS simplified abstract
- Micron technology, inc. (20240304253). MEMORY DEVICE FOR SUMMATION OF OUTPUTS OF SIGNED MULTIPLICATIONS simplified abstract
- Micron technology, inc. (20240304254). MEMORY DEVICE FOR SIGNED MULTI-BIT TO MULTI-BIT MULTIPLICATIONS simplified abstract
- Micron technology, inc. (20240304255). MEMORY DEVICE FOR MULTIPLICATION USING MEMORY CELLS WITH DIFFERENT THRESHOLDS BASED ON BIT SIGNIFICANCE simplified abstract
- Micron technology, inc. (20240304256). PROGRAMMING DELAY SCHEME FOR IN A MEMORY SUB-SYSTEM BASED ON MEMORY RELIABILITY simplified abstract
- Micron technology, inc. (20240312525). RE-DRIVING DATA TO A SUB-BLOCK DURING PROGRAMMING OF MULTIPLE SUB-BLOCKS simplified abstract
- Micron technology, inc. (20240312526). PARTIAL BLOCK HANDLING PROTOCOL IN A NON-VOLATILE MEMORY DEVICE simplified abstract
- Micron technology, inc. (20240347110). PERFORMING DATA INTEGRITY CHECKS TO IDENTIFY DEFECTIVE WORDLINES simplified abstract
- Micron technology, inc. (20240412787). RESAMPLE START VOLTAGE FOR CALIBRATION IN A PROGRAM OPERATION IMPROVEMENT
- Micron technology, inc. (20240428862). SEEDING BIAS CONTROL FOR SUB-BLOCK GROUPS IN A MEMORY DEVICE
- Micron technology, inc. (20240428863). BALANCING DATA IN MEMORY
- Micron technology, inc. (20250006269). MANAGING ALLOCATION OF BLOCKS IN A MEMORY SUB-SYSTEM
- Micron technology, inc. (20250006270). MANAGING ALLOCATION OF BLOCKS ACROSS PLANES IN A MEMORY SUB-SYSTEM
- Micron technology, inc. (20250014648). MEMORY DEVICE USING MULTI-PILLAR MEMORY CELLS FOR MATRIX VECTOR MULTIPLICATION
- Micron technology, inc. (20250104772). MEMORY CELL VOLTAGE LEVEL SELECTION
- Micron Technology, Inc. Patent Application Trends in 2024
- MICRON TECHNOLOGY, INC. Patent Application Trends in 2025
- Micron Technology, Inc. patent applications on August 22nd, 2024
- Micron Technology, Inc. patent applications on August 8th, 2024
- Micron Technology, Inc. patent applications on December 12th, 2024
- Micron Technology, Inc. patent applications on December 26th, 2024
- Micron Technology, Inc. patent applications on February 13th, 2025
- Micron Technology, Inc. patent applications on February 6th, 2025
- Micron Technology, Inc. patent applications on January 2nd, 2025
- Micron Technology, Inc. patent applications on January 9th, 2025
- Micron Technology, Inc. patent applications on July 11th, 2024
- Micron Technology, Inc. patent applications on July 25th, 2024
- Micron Technology, Inc. patent applications on June 20th, 2024
- Micron Technology, Inc. patent applications on March 27th, 2025
- Micron Technology, Inc. patent applications on March 6th, 2025
- Micron Technology, Inc. patent applications on October 17th, 2024
- Micron Technology, Inc. patent applications on September 12th, 2024
- Micron Technology, Inc. patent applications on September 19th, 2024
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- SAMSUNG ELECTRONICS CO., LTD Patent Application Trends in 2024
- Samsung electronics co., ltd. (20240194268). MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract
- Samsung electronics co., ltd. (20240242765). NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE HAVING THE SAME AND OPERATING METHOD OF NON-VOLATILE MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240242766). MEMORY DEVICE AND MEMORY DEVICE OPERATING METHOD simplified abstract
- Samsung electronics co., ltd. (20240379164). METHOD OF PROGRAMMING DATA IN NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE PERFORMING THE SAME simplified abstract
- Samsung electronics co., ltd. (20250014647). STORAGE DEVICE AND METHOD OF OPERATING THE SAME
- Samsung electronics co., ltd. (20250022516). METHOD OF PROGRAMMING NON-VOLATILE MEMORY DEVICE
- Samsung electronics co., ltd. (20250087272). METHOD FOR OPERATING FERROELECTRIC-BASED THREE-DIMENSIONAL FLASH MEMORY INCLUDING DATA STORAGE PATTERN
- Samsung electronics co., ltd. (20250095745). BLOCK SELECTION CIRCUIT CONTROLLING SERIES CONNECTED PASS TRANSISTORS AND FLASH MEMORY INCLUDING THE SAME
- Samsung Electronics Co., Ltd. Patent Application Trends in 2024
- SAMSUNG ELECTRONICS CO., LTD. Patent Application Trends in 2024
- Samsung electronics Co., Ltd. Patent Application Trends in 2024
- Samsung electronics CO., LTD. Patent Application Trends in 2025
- Samsung Electronics Co., Ltd. patent applications on January 16th, 2025
- Samsung Electronics Co., Ltd. patent applications on January 9th, 2025
- Samsung Electronics Co., Ltd. patent applications on July 18th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 13th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 13th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 13th, 2025
- Samsung Electronics Co., Ltd. patent applications on March 20th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 20th, 2025
- Samsung Electronics Co., Ltd. patent applications on November 14th, 2024
- Sk hynix inc. (20240265972). MEMORY APPARATUS PERFORMING PROGRAM OPERATION AND OPERATING METHOD THEREOF simplified abstract
- Sk hynix inc. (20240312524). SEMICONDUCTOR MEMORY DEVICE FOR PERFORMING PROGRAM OPERATION simplified abstract
- Sk hynix inc. (20250087271). SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SEMICONDUCTOR MEMORY DEVICE
- SK hynix Inc. patent applications on August 8th, 2024
- SK hynix Inc. patent applications on March 13th, 2025
- SK hynix Inc. patent applications on September 19th, 2024
- STMicroelectronics (Rousset) SAS Patent Application Trends in 2024
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- Western digital technologies, inc. (20240420771). OPTIMIZED READ CURRENT CONSUMPTION BASED ON LOWER PAGE READ INFORMATION FOR NON-VOLATILE MEMORY APPARATUS
- WESTERN DIGITAL TECHNOLOGIES, INC. Patent Application Trends in 2024
- Western Digital Technologies, Inc. patent applications on December 19th, 2024
- Winbond Electronics Corp. Patent Application Trends in 2024
