METHOD OF PROGRAMMING NON-VOLATILE MEMORY DEVICE

Organization Name

Inventor(s)

METHOD OF PROGRAMMING NON-VOLATILE MEMORY DEVICE

This abstract first appeared for US patent application 20250022516 titled 'METHOD OF PROGRAMMING NON-VOLATILE MEMORY DEVICE

Original Abstract Submitted

a method of programming a non-volatile memory device may include; during a first channel initialization period, applying a first voltage to a selected word line and a first word line group proximate to the selected word line, and applying a second voltage lower than the first voltage to a second word line group distal from the selected word line, applying a first program voltage to the selected word line during a first program execution period in order to perform a first program operation for data, during a second channel initialization period, applying the first voltage to the selected word line and the first word line group, and applying the second voltage to the second word line group, and applying a second program voltage to the selected word line during a second program execution period in order to perform a second program operation for the data.