MEMORY DEVICE AND OPERATION THEREOF

Organization Name

Inventor(s)

MEMORY DEVICE AND OPERATION THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18205835 titled 'MEMORY DEVICE AND OPERATION THEREOF

Simplified Explanation

The memory device described in the patent application consists of an array of memory cells organized in columns and rows, with word lines connecting to the rows of memory cells. A peripheral circuit is connected to the rows of memory cells through the word lines. Each memory cell stores N-bits of data by setting to one of 2final levels. The peripheral circuit is designed to program a selected row of memory cells based on N data pages in a first pass, setting each memory cell to one of k intermediate levels. After the first pass, the circuit reads M data pages from the selected row, where M is smaller than N.

Key Features and Innovation

Memory device with array of memory cells organized in columns and rows
Peripheral circuit for programming and reading data from memory cells
Each memory cell can store N-bits of data in 2final levels
Circuit programs a selected row based on N data pages in a first pass
Circuit reads M data pages from the selected row after the first pass

Potential Applications

Data storage devices
Embedded systems
Consumer electronics
Industrial automation
Internet of Things (IoT) devices

Problems Solved

Efficient programming and reading of data in memory cells
Optimization of memory storage capacity
Enhanced data retrieval speed
Improved data processing capabilities

Benefits

Increased data storage efficiency
Faster data access and retrieval
Enhanced performance in various applications
Greater flexibility in data handling
Potential for cost-effective memory solutions

Commercial Applications

The technology described in the patent application could have significant commercial applications in the development of data storage devices, embedded systems, consumer electronics, industrial automation, and IoT devices. By offering efficient programming and reading of data in memory cells, this innovation could lead to improved performance and cost-effective solutions in various industries.

Questions about Memory Devices

How does the peripheral circuit program the memory cells based on N data pages?

The peripheral circuit programs the memory cells by setting each cell to one of k intermediate levels, based on the data provided in the N data pages.

What are the potential benefits of using this memory device in consumer electronics?

The potential benefits of using this memory device in consumer electronics include faster data access, increased storage efficiency, and improved performance in handling large amounts of data.

Original Abstract Submitted

In certain aspects, a memory device includes an array of memory cells in columns and rows, word lines respectively coupled to rows of the memory cells, and a peripheral circuit coupled to the rows of memory cells through the word lines. Each memory cell is set to one of 2final levels corresponding to a piece of N-bits data, where Nis an integer greater than 2. The peripheral circuit is configured to program, in a first pass, a select row of the rows of the memory cells based on N data pages, such that each memory cell of the selected row is set to one of k intermediate levels, where k is an integer not greater than 2. The peripheral circuit is also configured to read M data pages of the N data pages from the select row after the first pass, where M is an integer smaller than N.