Samsung electronics co., ltd. (20240194268). MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract
MEMORY DEVICE AND OPERATING METHOD THEREOF
Organization Name
Inventor(s)
Yonghyuk Choi of Suwon-si (KR)
MEMORY DEVICE AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240194268 titled 'MEMORY DEVICE AND OPERATING METHOD THEREOF
Simplified Explanation: The patent application describes a memory device with memory cells connected to word lines, ground selection transistors connected to ground selection lines with different threshold voltages, and a control circuit that manages erase operations based on specific criteria.
- Memory device with memory cells connected to word lines
- First ground selection transistors with a first threshold voltage
- Second ground selection transistors with a different threshold voltage
- Control circuit that controls erase operations based on threshold voltages
Key Features and Innovation:
- Different threshold voltages for ground selection transistors
- Control circuit manages erase operations based on specific criteria
- Enhanced control over memory cell operations
Potential Applications: The technology can be applied in various memory storage devices, such as solid-state drives, to improve data storage and retrieval efficiency.
Problems Solved: The technology addresses the need for precise control over memory cell operations to enhance overall memory device performance.
Benefits:
- Improved memory device efficiency
- Enhanced data storage and retrieval capabilities
- Better control over memory cell operations
Commercial Applications: Title: Advanced Memory Device Technology for Enhanced Data Storage This technology can be utilized in the development of high-performance solid-state drives for commercial and industrial applications, improving data storage and retrieval speeds.
Prior Art: Readers can explore prior patents related to memory devices, ground selection transistors, and control circuits to understand the evolution of similar technologies.
Frequently Updated Research: Stay updated on advancements in memory device technology, ground selection transistor design, and control circuit innovations to enhance memory device performance.
Questions about Memory Device Technology: 1. How does the different threshold voltages for ground selection transistors impact memory device performance? 2. What are the specific criteria used by the control circuit to manage erase operations effectively?
Original Abstract Submitted
a memory device is provided. the memory device includes: memory cells respectively connected with word lines; first ground selection transistors connected with a first ground selection line programmed to have a first threshold voltage; second ground selection transistors connected with a second ground selection line programmed to have a second threshold voltage which differs from the first threshold voltage; and a control circuit configured to: control an erase operation to be performed on each of at least one first ground selection transistor of the first ground selection transistors based on a threshold voltage of each of the at least one first ground selection transistor being greater than a predetermined first criterion; and control a threshold voltage of each of the second ground selection transistors to be compared with a predetermined second criterion based on the erase operation on the at least one first ground selection transistor being completed.