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Category:H10N50/10
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Pages in category "H10N50/10"
The following 22 pages are in this category, out of 22 total.
1
- 18158086. Highly Physical Ion Resistive Spacer To Define Chemical Damage Free Sub 60nm Mram Devices simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18308401. MAGNETIC MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18337576. MAGNETORESISTANCE MEMORY DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTANCE MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18454960. STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18464350. MAGNETIC MEMORY simplified abstract (Kioxia Corporation)
- 18466727. MAGNETIC MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18521560. SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHAPED BOTTOM ELECTRODE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
K
- Kioxia corporation (20240099019). MAGNETORESISTANCE MEMORY DEVICE AND METHOD FOR MANUFACTURING MAGNETORESISTANCE MEMORY DEVICE simplified abstract
- Kioxia corporation (20240099153). STORAGE DEVICE simplified abstract
- Kioxia corporation (20240099155). MAGNETIC MEMORY simplified abstract
- Kioxia corporation (20240099158). MAGNETIC MEMORY DEVICE simplified abstract
- Kioxia Corporation patent applications on March 21st, 2024
T
- Taiwan semiconductor manufacturing co., ltd. (20240099151). SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHAPED BOTTOM ELECTRODE simplified abstract
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
U
- US Patent Application 18231414. SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF simplified abstract
- US Patent Application 18232941. MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, SEMICONDUCTOR ELEMENT, MAGNETIC RECORDING ARRAY, AND METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT simplified abstract
- US Patent Application 18234147. MAGNETORESISTANCE EFFECT ELEMENT simplified abstract
- US Patent Application 18361832. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract
- US Patent Application 18446703. MEMORY DEVICE AND FABRICATION METHOD THEREOF simplified abstract
- US Patent Application 18447912. MAGNETIC TUNNELING JUNCTION WITH SYNTHETIC FREE LAYER FOR SOT-MRAM simplified abstract