Kioxia corporation (20240099153). STORAGE DEVICE simplified abstract
Contents
STORAGE DEVICE
Organization Name
Inventor(s)
Takeshi Iwasaki of Kuwana Mie (JP)
Katsuyoshi Komatsu of Yokkaichi Mie (JP)
Jieqiong Zhang of Chiyoda Tokyo (JP)
STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240099153 titled 'STORAGE DEVICE
Simplified Explanation
The storage device described in the abstract consists of multiple layers including conductive layers, a variable resistance layer, and a switching layer with specific elements in different areas.
- The storage device includes a first conductive layer, a second conductive layer, a third conductive layer, a variable resistance layer, and a switching layer.
- The variable resistance layer is positioned between the first and second conductive layers.
- The switching layer is located between the second and third conductive layers and contains specific elements in different areas.
- The first area of the switching layer includes a first element selected from Sn, Ga, Zn, Ta, Ti, In, O, or N.
- The second area of the switching layer includes a second element selected from Sn, Ga, Zn, Ta, Ti, In, O, or N.
- The third area of the switching layer includes a third element selected from Zr, Y, Ce, Hf, Al, Mg, Nb, O, or N, and a metal element selected from Te, Sb, Bi, Ti, or Zn.
Potential Applications
This technology could be applied in:
- Non-volatile memory devices
- Resistive random-access memory (RRAM) devices
Problems Solved
- Enhanced data storage capabilities
- Improved resistance switching performance
Benefits
- Increased storage capacity
- Faster data access speeds
- Energy-efficient operation
Potential Commercial Applications
Optimized for:
- Data storage solutions
- Electronic devices requiring memory storage
Possible Prior Art
Prior art in resistive random-access memory (RRAM) technology includes research and patents related to similar structures and materials used in memory devices.
Unanswered Questions
How does this technology compare to existing memory storage solutions in terms of speed and capacity?
This technology offers potential improvements in data access speeds and storage capacity compared to traditional memory storage solutions.
What are the potential challenges in implementing this technology on a commercial scale?
Challenges in commercial implementation may include manufacturing processes, scalability, and cost-effectiveness.
Original Abstract Submitted
a storage device includes a first conductive layer, a second conductive layer, a third conductive layer, a variable resistance layer disposed between the first conductive layer and the second conductive layer, and a switching layer disposed between the second conductive layer and the third conductive layer. the second conductive layer is disposed between the first conductive layer and the third conductive layer. the switching layer includes a first area, a second area, and a third area disposed between the first area and the second area. the first area includes a first element selected from sn, ga, zn, ta, ti, and in, and o or n. the second area includes a second element selected from sn, ga, zn, ta, ti, and in, and o or n. the third area includes a third element selected from zr, y, ce, hf, al, mg, and nb, o or n, and a metal element selected from te, sb, bi, ti, and zn.
