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Category:G11C16/16
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Pages in category "G11C16/16"
The following 32 pages are in this category, out of 32 total.
1
- 17712238. SEMICONDUCTOR MEMORY DEVICE AND STORAGE SYSTEM INCLUDING SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17742874. NON-VOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17744942. SEMICONDUCTOR DEVICE PERFORMING BLOCK PROGRAM AND OPERATING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 17823191. PARTIAL BLOCK READ VOLTAGE OFFSET simplified abstract (Micron Technology, Inc.)
- 17831350. MEMORY BLOCK CHARACTERISTIC DETERMINATION simplified abstract (Micron Technology, Inc.)
- 17875827. APPARATUS WITH CIRCUIT MANAGEMENT MECHANISM AND METHODS FOR OPERATING THE SAME simplified abstract (Micron Technology, Inc.)
- 17893755. ERASE SUSPEND WITH CONFIGURABLE FORWARD PROGRESS simplified abstract (Micron Technology, Inc.)
- 17897448. DISCHARGE CIRCUITS simplified abstract (Micron Technology, Inc.)
- 17898043. NAND DETECT EMPTY PAGE SCAN simplified abstract (Micron Technology, Inc.)
- 17931935. SUSPENDING MEMORY ERASE OPERATIONS TO PERFORM HIGHER PRIORITY MEMORY COMMANDS simplified abstract (Micron Technology, Inc.)
- 17942977. READ LEVEL COMPENSATION FOR PARTIALLY PROGRAMMED BLOCKS OF MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17983705. SEMICONDUCTOR DEVICE FOR IMPROVING RETENTION PERFORMANCE AND OPERATING METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18057386. NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18079433. OPERATION METHOD OF NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18088046. NONVOLATILE MEMORY DEVICE AND OPERATION METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18235183. ERASE PULSE LOOP DEPENDENT ADJUSTMENT OF SELECT GATE ERASE BIAS VOLTAGE simplified abstract (Micron Technology, Inc.)
- 18315311. INTERFACES BETWEEN HIGHER VOLTAGE AND LOWER VOLTAGE WAFERS AND RELATED APPARATUSES AND METHODS simplified abstract (Micron Technology, Inc.)
- 18356522. NONVOLATILE MEMORY DEVICE AND METHOD OF DETECTING DEFECTIVE MEMORY CELL BLOCK OF NONVOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18378540. MEMORY DEVICE THAT PERFORMS ERASE OPERATION TO PRESERVE DATA RELIABILITY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18459745. STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18509301. DATA STORAGE DEVICE AND OPERATING METHOD THEREOF simplified abstract (SK hynix Inc.)
- 18522343. MEMORY SYSTEM simplified abstract (Kioxia Corporation)
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- Micron technology, inc. (20240127900). PERFORMING SELECTIVE COPYBACK IN MEMORY DEVICES simplified abstract
- Micron Technology, Inc. patent applications on April 18th, 2024
- Micron Technology, Inc. patent applications on February 1st, 2024
- Micron Technology, Inc. patent applications on February 29th, 2024
- Micron Technology, Inc. patent applications on March 14th, 2024