Category:G03F1/24
- Section G: Physics
- Class G03: Photography; Cinematography; Analogous Techniques Using Waves Other Than Optical Waves; Electrography; Holography
- Subclass G03F: Photomechanical Production of Textured or Patterned Surfaces, e.g., for Printing, for Processing of Semiconductor Devices
- Main Group G03F1/00: Photomechanical, e.g., Photographic, Production of Textured or Patterned Surfaces, e.g., Printed Surfaces, Resist Coatings, For Use in Photomechanical, Photoengraving, Photolithographic Processes; Apparatus Therefor
- Subgroup G03F1/24: Photosensitive materials
The classification "G03F1/24" falls within the realm of physics, specifically focusing on the photomechanical production of textured or patterned surfaces, which is a key process in fields like printing and semiconductor device processing. This subgroup is dedicated to photosensitive materials used in these photomechanical processes. It covers the development, composition, and application of materials that react to light, which are crucial in photolithography – a process widely used in semiconductor manufacturing to create intricate patterns for integrated circuits. The advancements in this area are vital for continuing miniaturization and increasing the complexity of electronic devices.
Pages in category "G03F1/24"
The following 23 pages are in this category, out of 23 total.
1
- 17736772. MANUFACTURING METHOD OF EUV PHOTO MASKS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17749033. EXTREME ULTRAVIOLET MASK WITH CAPPING LAYER simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18123749. EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18151416. EUV MASKS TO PREVENT CARBON CONTAMINATION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18180210. REFLECTIVE MASK AND METHOD OF DESIGNING ANTI-REFLECTION PATTERN OF THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18320387. EXTREME ULTRAVIOLET (EUV) MASK AND MANUFACTURING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18328395. METHOD OF MANUFACTURING PHOTOMASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18402511. EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18517796. REFLECTIVE MASK BLANK, REFLECTIVE MASK, METHOD OF MANUFACTURING REFLECTIVE MASK BLANK, AND METHOD OF MANUFACTURING REFLECTIVE MASK simplified abstract (AGC Inc.)
S
T
- Taiwan semiconductor manufacturing company, ltd. (20240134266). EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 25th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 15th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
U
- US Patent Application 18230968. EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF simplified abstract
- US Patent Application 18232674. PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF simplified abstract
- US Patent Application 18359954. Mask Defect Prevention simplified abstract
- US Patent Application 18361891. EUV PHOTOMASK AND MANUFACTURING METHOD OF THE SAME simplified abstract
- US Patent Application 18365757. EUV MASK BLANK AND METHOD OF MAKING EUV MASK BLANK simplified abstract
- US Patent Application 18366136. EUV Lithography Mask With A Porous Reflective Multilayer Structure simplified abstract
- US Patent Application 18366397. EUV PHOTOMASK AND RELATED METHODS simplified abstract