18320387. EXTREME ULTRAVIOLET (EUV) MASK AND MANUFACTURING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 EXTREME ULTRAVIOLET (EUV) MASK AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 EXTREME ULTRAVIOLET (EUV) MASK AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
EXTREME ULTRAVIOLET (EUV) MASK AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
EXTREME ULTRAVIOLET (EUV) MASK AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18320387 titled 'EXTREME ULTRAVIOLET (EUV) MASK AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The abstract describes an extreme ultraviolet (EUV) mask with a substrate, a reflective layer, and an absorber layer with a dummy hole pattern.
- The EUV mask has a rectangular substrate, a reflective layer, and an absorber layer.
- The reflective layer is smaller than the substrate and the absorber layer has the same shape as the reflective layer.
- The absorber layer includes a dummy hole pattern in a rectangular frame shape along the edge portion.
Potential Applications
The technology described in this patent application could be used in the manufacturing of semiconductor devices, specifically in the lithography process for creating intricate patterns on silicon wafers.
Problems Solved
This technology solves the problem of improving the precision and accuracy of patterning on semiconductor devices by utilizing a dummy hole pattern to enhance the performance of the EUV mask.
Benefits
The benefits of this technology include higher resolution and better quality in the production of semiconductor devices, leading to improved performance and efficiency in electronic devices.
Potential Commercial Applications
- "Enhancing Semiconductor Lithography with Dummy Hole Patterns"
Possible Prior Art
There may be prior art related to the use of dummy hole patterns in EUV masks for semiconductor lithography processes. One example could be research papers or patents discussing similar techniques for improving patterning accuracy.
Unanswered Questions
How does the dummy hole pattern impact the overall performance of the EUV mask?
The dummy hole pattern is mentioned in the abstract, but the specific effects or benefits of incorporating this pattern are not detailed. Further research or experimentation may be needed to understand the full impact of the dummy hole pattern on the mask's performance.
Are there any limitations or drawbacks to using a dummy hole pattern in the absorber layer?
While the abstract highlights the use of a dummy hole pattern, it does not mention any potential limitations or drawbacks associated with this design choice. It would be important to investigate if there are any negative consequences or challenges that may arise from implementing this pattern in the EUV mask.
Original Abstract Submitted
An extreme ultraviolet (EUV) mask may include a substrate having a rectangular shape, a reflective layer on the substrate and having a rectangular shape smaller than the rectangular shape of the substrate, and an absorber layer on the reflective layer. The absorber layer may have a same shape as the rectangular shape of the reflective layer. The absorber layer may include a dummy hole pattern. The dummy hole pattern may be in a rectangular frame shape along an edge portion of the absorber layer and may include a plurality of dummy holes exposing the reflective layer.
