18402511. EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications of this Technology
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Yun-Yue Lin of Hsinchu City (TW)
EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18402511 titled 'EUV PHOTO MASKS AND MANUFACTURING METHOD THEREOF
Simplified Explanation
A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The absorber layer includes one or more layers of an Ir based material, a Pt based material or a Ru based material.
- Substrate, reflective multilayer, capping layer, intermediate layer, absorber layer, and cover layer are key components of the reflective mask.
- The absorber layer contains Ir, Pt, or Ru based materials.
- The layers work together to enhance reflectivity and absorption properties of the mask.
Potential Applications
The technology can be used in:
- Semiconductor manufacturing
- Photolithography processes
- Optical coatings
Problems Solved
- Improved reflectivity and absorption in masks
- Enhanced performance in semiconductor processes
Benefits
- Higher efficiency in manufacturing processes
- Better quality in optical coatings
- Increased productivity in semiconductor industry
Potential Commercial Applications of this Technology
Optimizing Reflective Masks for Semiconductor Manufacturing
Possible Prior Art
No prior art known at this time.
Unanswered Questions
How does the reflective mask compare to traditional masks in terms of performance and cost?
The article does not provide a direct comparison between the reflective mask and traditional masks in terms of performance and cost.
Are there any limitations to the materials used in the absorber layer?
The article does not mention any limitations or drawbacks of using Ir, Pt, or Ru based materials in the absorber layer.
Original Abstract Submitted
A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The absorber layer includes one or more layers of an Jr based material, a Pt based material or a Ru based material.
