US Patent Application 18366136. EUV Lithography Mask With A Porous Reflective Multilayer Structure simplified abstract

EUV Lithography Mask With A Porous Reflective Multilayer Structure

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chih-Tsung Shih of Hsinchu City (TW)

Shih-Chang Shih of Hsinchu (TW)

Li-Jui Chen of Hsinchu City (TW)

Po-Chung Cheng of Chiayi County (TW)

EUV Lithography Mask With A Porous Reflective Multilayer Structure - A simplified explanation of the abstract

This abstract first appeared for US patent application 18366136 titled 'EUV Lithography Mask With A Porous Reflective Multilayer Structure

Simplified Explanation

- The patent application describes a lithography mask that is used in the process of manufacturing electronic devices. - The mask includes a substrate made of a low thermal expansion material (LTEM) to ensure stability during the manufacturing process. - The mask also includes a reflective structure, which is made up of multiple layers, including a first layer and a second layer. - The second layer of the reflective structure is porous, which allows for certain properties and characteristics to be achieved. - The mask is formed by creating a multilayer reflective structure over the LTEM substrate, using a series of film pairs consisting of a first layer and a porous second layer. - A capping layer is then added over the multilayer reflective structure to provide additional protection and stability. - Finally, an absorber layer is formed over the capping layer to complete the mask. - The innovation in this patent application lies in the use of a porous second layer in the reflective structure, which may offer unique advantages and benefits in the manufacturing process.

Original Abstract Submitted

A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). The lithography mask also includes a reflective structure disposed over the substrate. The reflective structure includes a first layer and a second layer disposed over the first layer. At least the second layer is porous. The mask is formed by forming a multilayer reflective structure over the LTEM substrate, including forming a plurality of repeating film pairs, where each film pair includes a first layer and a porous second layer. A capping layer is formed over the multilayer reflective structure. An absorber layer is formed over the capping layer.