Samsung electronics co., ltd. (20240126161). EXTREME ULTRAVIOLET (EUV) MASK AND MANUFACTURING METHOD THEREOF simplified abstract
Contents
- 1 EXTREME ULTRAVIOLET (EUV) MASK AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 EXTREME ULTRAVIOLET (EUV) MASK AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing EUV mask designs in terms of performance and cost-effectiveness?
- 1.11 What are the specific manufacturing processes involved in creating the EUV mask with the described features?
- 1.12 Original Abstract Submitted
EXTREME ULTRAVIOLET (EUV) MASK AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
EXTREME ULTRAVIOLET (EUV) MASK AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240126161 titled 'EXTREME ULTRAVIOLET (EUV) MASK AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The abstract describes an extreme ultraviolet (EUV) mask with a substrate, a reflective layer, and an absorber layer with a dummy hole pattern.
- The EUV mask has a rectangular substrate.
- The reflective layer is smaller and also rectangular, placed on the substrate.
- The absorber layer, with the same shape as the reflective layer, is on top.
- The absorber layer includes a dummy hole pattern in a rectangular frame shape along the edge, with multiple dummy holes exposing the reflective layer.
Potential Applications
The technology described in the patent application could be used in the semiconductor industry for lithography processes, specifically in the production of advanced integrated circuits.
Problems Solved
This technology helps in improving the precision and accuracy of patterning processes in semiconductor manufacturing, ensuring high-quality and reliable performance of the final products.
Benefits
The benefits of this technology include enhanced resolution, reduced defects, increased productivity, and overall cost-effectiveness in the production of semiconductor devices.
Potential Commercial Applications
- "Advanced Lithography Solutions for Semiconductor Manufacturing"
Possible Prior Art
There may be prior art related to EUV mask technology in the semiconductor industry, but specific examples are not provided in the abstract.
Unanswered Questions
How does this technology compare to existing EUV mask designs in terms of performance and cost-effectiveness?
The article does not provide a direct comparison with existing EUV mask designs, leaving the reader to speculate on the advantages and disadvantages of this new technology.
What are the specific manufacturing processes involved in creating the EUV mask with the described features?
The abstract does not delve into the detailed manufacturing processes involved in creating the EUV mask, leaving a gap in understanding the practical implementation of this technology.
Original Abstract Submitted
an extreme ultraviolet (euv) mask may include a substrate having a rectangular shape, a reflective layer on the substrate and having a rectangular shape smaller than the rectangular shape of the substrate, and an absorber layer on the reflective layer. the absorber layer may have a same shape as the rectangular shape of the reflective layer. the absorber layer may include a dummy hole pattern. the dummy hole pattern may be in a rectangular frame shape along an edge portion of the absorber layer and may include a plurality of dummy holes exposing the reflective layer.
