US Patent Application 18365757. EUV MASK BLANK AND METHOD OF MAKING EUV MASK BLANK simplified abstract

EUV MASK BLANK AND METHOD OF MAKING EUV MASK BLANK

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Ping-Hsun Lin of Hsinchu (TW)

Pei-Cheng Hsu of Hsinchu (TW)

Ching-Fang Yu of Hsinchu (TW)

Ta-Cheng Lien of Hsinchu (TW)

Chia-Jen Chen of Hsinchu (TW)

Hsin-Chang Lee of Hsinchu (TW)

EUV MASK BLANK AND METHOD OF MAKING EUV MASK BLANK - A simplified explanation of the abstract

This abstract first appeared for US patent application 18365757 titled 'EUV MASK BLANK AND METHOD OF MAKING EUV MASK BLANK

Simplified Explanation

The abstract describes an extreme ultraviolet (EUV) mask that consists of a substrate, a reflective multilayer stack, and a capping layer.

• The reflective multilayer stack is treated before the capping layer is formed on top of it.
• The capping layer is created using either an ion-assisted ion beam deposition or an ion-assisted sputtering process.

Bullet points:

• The patent application is for an EUV mask design.
• The mask includes a substrate, a reflective multilayer stack, and a capping layer.
• The reflective multilayer stack is treated prior to the formation of the capping layer.
• The capping layer is formed using either ion-assisted ion beam deposition or ion-assisted sputtering.
• The purpose of the capping layer is not specified in the abstract.
• The innovation lies in the specific process used to create the capping layer.

Original Abstract Submitted

An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a capping layer on the reflective multilayer stack is provided. The reflective multilayer stack is treated prior to formation of the capping layer on the reflective multilayer stack. The capping layer is formed by an ion-assisted ion beam deposition or an ion-assisted sputtering process.