17749033. EXTREME ULTRAVIOLET MASK WITH CAPPING LAYER simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
EXTREME ULTRAVIOLET MASK WITH CAPPING LAYER
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Hsin-Chang Lee of Hsinchu (TW)
EXTREME ULTRAVIOLET MASK WITH CAPPING LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 17749033 titled 'EXTREME ULTRAVIOLET MASK WITH CAPPING LAYER
Simplified Explanation
The abstract describes a patent application for an extreme ultraviolet (EUV) mask. The mask includes a substrate, a reflective multilayer stack, and a capping feature. The capping feature consists of a capping layer or layers made of a material with an amorphous structure. In some embodiments, the capping layer(s) contain element(s) with a low solid carbon solubility.
- The patent application is for an extreme ultraviolet (EUV) mask.
- The mask includes a substrate, a reflective multilayer stack, and a capping feature.
- The capping feature consists of a capping layer or layers made of a material with an amorphous structure.
- In some embodiments, the capping layer(s) contain element(s) with a low solid carbon solubility.
Potential Applications
- Manufacturing of extreme ultraviolet (EUV) masks for use in semiconductor lithography.
- Production of high-resolution microchips and electronic devices.
Problems Solved
- Enhances the performance and durability of extreme ultraviolet (EUV) masks.
- Reduces the risk of damage and degradation during the manufacturing process.
- Improves the quality and accuracy of semiconductor lithography.
Benefits
- Increased efficiency and reliability of extreme ultraviolet (EUV) masks.
- Improved resolution and precision in the production of microchips and electronic devices.
- Cost-effective manufacturing process with reduced risk of defects.
Original Abstract Submitted
An extreme ultraviolet (EUV) mask, includes a substrate, a reflective multilayer stack on the substrate, and a single layer or multi-layer capping feature on the reflective multilayer stack. The capping feature includes a capping layer or capping layers including a material having an amorphous structure. Other described embodiments include capping layer(s) that contain element(s) having a first solid carbon solubility less than about 3. In multilayer capping feature embodiments, element(s) of the respective capping layers have different solid carbon solubility properties.
