18151416. EUV MASKS TO PREVENT CARBON CONTAMINATION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
EUV MASKS TO PREVENT CARBON CONTAMINATION
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Pei-Cheng Hsu of Taipei City (TW)
Ta-Cheng Lien of Hsinchu County (TW)
Hsin-Chang Lee of Hsinchu County (TW)
EUV MASKS TO PREVENT CARBON CONTAMINATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18151416 titled 'EUV MASKS TO PREVENT CARBON CONTAMINATION
Simplified Explanation
The patent application describes a method for forming a multi-layered reflective layer over a substrate, followed by the deposition of various metal and metal oxide layers. Features are then formed on the top layers.
- The method involves the formation of a multi-layered reflective layer over a substrate.
- A metal capping layer is deposited over the reflective layer.
- A first metal oxide layer is deposited over the metal capping layer.
- A metal nitride layer is deposited over the first metal oxide layer.
- A second metal oxide layer is deposited over the metal nitride layer.
- Features are formed on the second metal oxide layer and the metal nitride layer.
Potential Applications
- Optical coatings
- Photovoltaic devices
- Display technologies
- Semiconductor manufacturing
Problems Solved
- Improved reflective properties
- Enhanced durability and resistance to degradation
- Increased efficiency of optical devices
- Better performance of semiconductor devices
Benefits
- Higher reflectivity
- Improved optical performance
- Increased device efficiency
- Enhanced durability and longevity
Original Abstract Submitted
A method includes forming a multi-layered reflective layer over a substrate; depositing a metal capping layer over the multi-layered reflective layer; depositing a first metal oxide layer over the metal capping layer; depositing a metal nitride layer over the first metal oxide layer; depositing a second metal oxide layer over the metal nitride layer; forming a plurality of features on the second metal oxide layer and the metal nitride layer.
