17736772. MANUFACTURING METHOD OF EUV PHOTO MASKS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

MANUFACTURING METHOD OF EUV PHOTO MASKS

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Wei-Che Hsieh of Taipei (TW)

Chia-Ching Chu of Hsinchu (TW)

Ya-Lun Chen of Hsinchu City (TW)

Yu-Chung Su of Hsinchu City (TW)

Tzu-Yi Wang of Hsinchu City (TW)

Yahru Cheng of Taipei (TW)

Ta-Cheng Lien of Cyonglin Township (TW)

Hsin-Chang Lee of Zhubei City (TW)

Ching-Yu Chang of Yuansun Village (TW)

MANUFACTURING METHOD OF EUV PHOTO MASKS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17736772 titled 'MANUFACTURING METHOD OF EUV PHOTO MASKS

Simplified Explanation

The abstract describes a method of manufacturing a reflective mask used in semiconductor manufacturing. The method involves forming an adhesion layer over a mask blank and then patterning various layers of the mask using a photoresist pattern and a hard mask layer.

• An adhesion layer is formed over a mask blank.
• The mask blank includes a substrate, a reflective multilayer, a capping layer, an absorber layer, and a hard mask layer.
• A photoresist pattern is formed over the adhesion layer.
• The adhesion layer is patterned.
• The hard mask layer is patterned.
• The absorber layer is patterned using the patterned hard mask layer as an etching mask.
• The photoresist layer has higher adhesiveness to the adhesion layer than to the hard mask layer.

Potential applications of this technology:

• Semiconductor manufacturing
• Fabrication of reflective masks used in lithography processes

Problems solved by this technology:

• Provides a method for manufacturing reflective masks with improved adhesion between layers
• Enables precise patterning of various layers in the mask

Benefits of this technology:

• Improved manufacturing process for reflective masks
• Enhanced adhesion between layers in the mask
• Enables high precision patterning for semiconductor manufacturing

Original Abstract Submitted

In a method of manufacturing a reflective mask, an adhesion layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an absorber layer disposed over the capping layer, and a hard mask layer disposed over the absorber layer. A photoresist pattern is formed over the adhesion layer, the adhesion layer is patterned, the hard mask layer is patterned, and the absorber layer is patterned using the patterned hard mask layer as an etching mask. The photoresist layer has a higher adhesiveness to the adhesion layer than to the hard mask layer.