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Category:H10B99/00
Subcategories
This category has the following 18 subcategories, out of 18 total.
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M
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Pages in category "H10B99/00"
The following 77 pages are in this category, out of 77 total.
1
- 18112020. MEMORY STRUCTURES HAVING A SINGLE ACCESS TRANSISTOR FOR MULTIPLE MEMORY DEVICES simplified abstract (International Business Machines Corporation)
- 18346212. TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT (Intel Corporation)
- 18387921. Integrated Assemblies Comprising Hydrogen Diffused Within Two or More Different Semiconductor Materials, and Methods of Forming Integrated Assemblies simplified abstract (Micron Technology, Inc.)
- 18400082. MEMORY DEVICE HAVING 2-TRANSISTOR MEMORY CELL AND ACCESS LINE PLATE simplified abstract (Micron Technology, Inc.)
- 18413281. NONVOLATILE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18417830. THIN FILM TRANSISTORS AND RELATED FABRICATION TECHNIQUES simplified abstract (Micron Technology, Inc.)
- 18471292. CAPACITOR STRUCTURE (MACRONIX International Co., Ltd.)
- 18487248. SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE simplified abstract (ROHM CO., LTD.)
- 18581604. Methods, Structures and Devices for Intra-Connection Structures simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18589769. SEMICONDUCTOR DEVICE (KABUSHIKI KAISHA TOSHIBA)
- 18615490. MEMORY DEVICE HAVING SHARED READ/WRITE ACCESS LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL simplified abstract (Micron Technology, Inc.)
- 18615718. METHOD FOR MANUFACTURING A MEMORY DEVICE AND MEMORY DEVICE MANUFACTURED THROUGH THE SAME METHOD simplified abstract (Micron Technology, Inc.)
- 18657376. MEMORY DEVICE AND ELECTRONIC DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18673571. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18735002. SEMICONDUCTOR STORAGE DEVICE COMPRISING STAIRCASE PORTION simplified abstract (Kioxia Corporation)
- 18743686. APPARATUS AND ELECTRONIC DEVICES INCLUDING TRANSISTORS COMPRISING TWO-DIMENSIONAL MATERIALS simplified abstract (Micron Technology, Inc.)
- 18785752. MEMORY DEVICE FOR IMPLEMENTING MULTI-LEVEL MEMORY AND METHOD OF IMPLEMENTING MULTI-LEVEL MEMORY BY USING THE MEMORY DEVICE (Samsung Electronics Co., Ltd.)
- 18826246. BURIED LINES AND RELATED FABRICATION TECHNIQUES (Micron Technology, Inc.)
- 18943125. MEMORY DEVICE AND MANUFACTURING METHOD OF THE MEMORY DEVICE (SK hynix Inc.)
- 18957839. SEMICONDUCTOR MEMORY DEVICE MANUFACTURING METHOD (NANYA TECHNOLOGY CORPORATION)
- 18965260. SEMICONDUCTOR DEVICE (Semiconductor Energy Laboratory Co., Ltd.)
- 18989035. Semiconductor Device Including Via Structure And Method For Manufacturing The Same (Samsung Electronics Co., Ltd.)
- 19013909. Memory Circuitry Comprising a Vertical String of Memory Cells and a Conductive Via and Method Used in Forming a Vertical String of Memory Cells and a Conductive Via (Micron Technology, Inc.)
I
- Intel corporation (20250008852). TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT
- Intel Corporation patent applications on January 2nd, 2025
- International business machines corporation (20240284687). MEMORY STRUCTURES HAVING A SINGLE ACCESS TRANSISTOR FOR MULTIPLE MEMORY DEVICES simplified abstract
- International Business Machines Corporation patent applications on August 22nd, 2024
K
- Kabushiki kaisha toshiba (20250098183). SEMICONDUCTOR DEVICE
- KABUSHIKI KAISHA TOSHIBA patent applications on March 20th, 2025
- Kioxia corporation (20240324251). SEMICONDUCTOR STORAGE DEVICE COMPRISING STAIRCASE PORTION simplified abstract
- Kioxia Corporation patent applications on September 26th, 2024
M
- Micron technology, inc. (20240185892). MEMORY ARRAY DECODING AND INTERCONNECTS simplified abstract
- Micron technology, inc. (20240233797). MEMORY DEVICE HAVING SHARED READ/WRITE ACCESS LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL simplified abstract
- Micron technology, inc. (20240237364). THIN FILM TRANSISTORS AND RELATED FABRICATION TECHNIQUES simplified abstract
- Micron technology, inc. (20240237365). METHOD FOR MANUFACTURING A MEMORY DEVICE AND MEMORY DEVICE MANUFACTURED THROUGH THE SAME METHOD simplified abstract
- Micron technology, inc. (20240339543). APPARATUS AND ELECTRONIC DEVICES INCLUDING TRANSISTORS COMPRISING TWO-DIMENSIONAL MATERIALS simplified abstract
- Micron technology, inc. (20250072118). BURIED LINES AND RELATED FABRICATION TECHNIQUES
- Micron technology, inc. (20250151274). Memory Circuitry Comprising a Vertical String of Memory Cells and a Conductive Via and Method Used in Forming a Vertical String of Memory Cells and a Conductive Via
- Micron Technology, Inc. patent applications on February 27th, 2025
- Micron Technology, Inc. patent applications on February 29th, 2024
- Micron Technology, Inc. patent applications on July 11th, 2024
- Micron Technology, Inc. patent applications on June 6th, 2024
- Micron Technology, Inc. patent applications on May 8th, 2025
- Micron Technology, Inc. patent applications on October 10th, 2024
S
- Samsung electronics co., ltd. (20240422996). NONVOLATILE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME
- Samsung electronics co., ltd. (20250024691). THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Samsung electronics co., ltd. (20250125225). Semiconductor Device Including Via Structure And Method For Manufacturing The Same
- Samsung electronics co., ltd. (20250149084). MEMORY DEVICE FOR IMPLEMENTING MULTI-LEVEL MEMORY AND METHOD OF IMPLEMENTING MULTI-LEVEL MEMORY BY USING THE MEMORY DEVICE
- Samsung Electronics Co., Ltd. patent applications on April 17th, 2025
- Samsung Electronics Co., Ltd. patent applications on December 19th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on December 19th, 2024
- Samsung Electronics Co., Ltd. patent applications on February 6th, 2025
- Samsung Electronics Co., Ltd. patent applications on January 16th, 2025
- Samsung Electronics Co., Ltd. patent applications on January 30th, 2025
- Samsung Electronics Co., Ltd. patent applications on May 8th, 2025
- Semiconductor energy laboratory co., ltd. (20240266444). SEMICONDUCTOR DEVICE simplified abstract
- Semiconductor Energy Laboratory Co., Ltd. patent applications on August 8th, 2024
- Sk hynix inc. (20250071995). MEMORY DEVICE AND MANUFACTURING METHOD OF THE MEMORY DEVICE
- SK hynix Inc. patent applications on February 20th, 2025
- SK hynix Inc. patent applications on February 27th, 2025
- Smart Dust patent applications on February 6th, 2025
T
- Taiwan semiconductor manufacturing co., ltd. (20240196585). Methods, Structures and Devices for Intra-Connection Structures simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240312830). THREE-DIMENSIONAL MEMORY DEVICE AND METHOD simplified abstract
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on June 13th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. patent applications on September 19th, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240380402). Semiconductor Device For Logic and Memory Co-Optimization simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240413150). Semiconductor Device With Isolation Structure
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on December 12th, 2024
- Taiwan Semiconductor Manufacturing Company, LTD. patent applications on February 6th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on November 14th, 2024
- Texas Instruments Incorporated patent applications on February 6th, 2025
U
- US Patent Application 18346056. STRUCTURE AND METHOD FOR PREVENTING SILICIDE CONTAMINATION DURING THE MANUFACTURE OF MICRO-PROCESSORS WITH EMBEDDED FLASH MEMORY simplified abstract
- US Patent Application 18362192. MEMORY CHIPLET HAVING MULTIPLE ARRAYS OF MEMORY DEVICES AND METHODS OF FORMING THE SAME simplified abstract
- US Patent Application 18362685. Memory Array Staircase Structure simplified abstract