18673571. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor(s)
Sheng-Chen Wang of Hsinchu (TW)
Feng-Cheng Yang of Hsinchu (TW)
Chung-Te Lin of Tainan City (TW)
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18673571 titled 'THREE-DIMENSIONAL MEMORY DEVICE AND METHOD
The method described in the patent application involves forming a 3D memory device by creating a layer stack with alternating layers of different dielectric materials, forming trenches in the layer stack, replacing one dielectric material with an electrically conductive material to create word lines (WLs), lining the trenches with a ferroelectric material, filling the trenches with another dielectric material, and forming vertical bit lines (BLs) and source lines (SLs) through the dielectric material.
- Formation of a layer stack with alternating dielectric materials
- Creation of trenches in the layer stack
- Replacement of one dielectric material with an electrically conductive material for WLs
- Lining of trenches with a ferroelectric material
- Filling of trenches with another dielectric material
- Formation of BLs and SLs through the dielectric material
- Channel material formation along the sidewalls of the openings
- Filling of the openings with a fourth dielectric material
Potential Applications: - High-density memory devices - Non-volatile memory storage - Embedded memory in integrated circuits
Problems Solved: - Increasing memory density in a smaller footprint - Enhancing memory performance and reliability - Improving data retention and endurance
Benefits: - Higher memory capacity - Faster data access speeds - Lower power consumption
Commercial Applications: Title: Advanced 3D Memory Devices for Next-Generation Electronics This technology can be utilized in: - Smartphones and tablets - Wearable devices - IoT applications - Data centers and servers
Questions about the technology: 1. How does the use of ferroelectric materials impact the performance of the memory device? 2. What are the potential challenges in scaling this technology for mass production?
Frequently Updated Research: Ongoing research focuses on optimizing the materials and processes used in 3D memory device fabrication to further improve performance and reliability.
Original Abstract Submitted
A method of forming a three-dimensional (3D) memory device includes: forming a layer stack over a substrate, the layer stack including alternating layers of a first dielectric material and a second dielectric material; forming trenches extending through the layer stack; replacing the second dielectric material with an electrically conductive material to form word lines (WLs); lining sidewalls and bottoms of the trenches with a ferroelectric material; filling the trenches with a third dielectric material; forming bit lines (BLs) and source lines (SLs) extending vertically through the third dielectric material; removing portions of the third dielectric material to form openings in the third dielectric material between the BLs and the SLs; forming a channel material along sidewalls of the openings; and filling the openings with a fourth dielectric.