Intel corporation (20250008852). TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT
TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT
Organization Name
Inventor(s)
Punyashloka Debashis of Hillsboro OR US
Dominique A. Adams of Portland OR US
Gauri Auluck of Hillsboro OR US
Scott B. Clendenning of Portland OR US
Arnab Sen Gupta of Hillsboro OR US
Brandon Holybee of Portland OR US
Matthew V. Metz of Portland OR US
Kevin P. O'brien of Portland OR US
John J. Plombon of Portland OR US
Marko Radosavljevic of Portland OR US
Carly Rogan of North Plains OR US
Rachel A. Steinhardt of Beaverton OR US
Tristan A. Tronic of Aloha OR US
I-Cheng Tung of Hillsboro OR US
Ian Alexander Young of Olympia WA US
Dmitri Evgenievich Nikonov of Beaverton OR US
TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT
This abstract first appeared for US patent application 20250008852 titled 'TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT
Original Abstract Submitted
a two-terminal ferroelectric perovskite diode comprises a region of ferroelectric perovskite material positioned adjacent to a region of n-type doped perovskite semiconductor material. asserting a positive voltage across the diode can cause the polarization of the ferroelectric perovskite material to be set in a first direction that causes the diode to be placed in a low resistance state due to the formation of an accumulation region in the perovskite semiconductor material at the ferroelectric perovskite-perovskite semiconductor boundary. asserting a negative voltage across the diode can cause the polarization of the ferroelectric perovskite material to be set in a second direction that causes the diode to be placed in a high resistance state due to the formation of a depletion region in the perovskite semiconductor material at the ferroelectric perovskite-perovskite semiconductor material. these non-volatile low and high resistance states enable the diode to be used as a non-volatile memory element.
- Intel corporation
- Punyashloka Debashis of Hillsboro OR US
- Dominique A. Adams of Portland OR US
- Gauri Auluck of Hillsboro OR US
- Scott B. Clendenning of Portland OR US
- Arnab Sen Gupta of Hillsboro OR US
- Brandon Holybee of Portland OR US
- Raseong Kim of Portland OR US
- Matthew V. Metz of Portland OR US
- Kevin P. O'brien of Portland OR US
- John J. Plombon of Portland OR US
- Marko Radosavljevic of Portland OR US
- Carly Rogan of North Plains OR US
- Hojoon Ryu of Hillsboro OR US
- Rachel A. Steinhardt of Beaverton OR US
- Tristan A. Tronic of Aloha OR US
- I-Cheng Tung of Hillsboro OR US
- Ian Alexander Young of Olympia WA US
- Dmitri Evgenievich Nikonov of Beaverton OR US
- H10N70/00
- H10B63/00
- H10B99/00
- CPC H10N70/8836