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Category:H01L29/36
Subcategories
This category has the following 11 subcategories, out of 11 total.
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H
J
M
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Pages in category "H01L29/36"
The following 64 pages are in this category, out of 64 total.
1
- 17967200. TRANSISTOR INCLUDING TWO-DIMENSIONAL (2D) CHANNEL simplified abstract (Samsung Electronics Co., Ltd.)
- 18089945. TRANSISTOR INCLUDING WIDE BAND GAP MATERIALS simplified abstract (Intel Corporation)
- 18147875. BREAKDOWN DIODES AND METHODS OF MAKING THE SAME simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18233693. 3DSFET DEVICE INCLUDING RESTRUCTURED LOWER SOURCE/DRAIN REGION HAVING INCREASED CONTACT AREA simplified abstract (Samsung Electronics Co., Ltd.)
- 18234344. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18234344. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18307456. SEMICONDUCTOR DEVICE simplified abstract (Mitsubishi Electric Corporation)
- 18361647. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18463755. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
- 18463755. SEMICONDUCTOR DEVICE simplified abstract (Toshiba Electronic Devices & Storage Corporation)
- 18467232. MPS DIODE HAVING A NON-UNIFORMLY DOPED REGION AND METHOD FOR MANUFACTURING THE SAME simplified abstract (NEXPERIA B.V.)
- 18467251. MPS DIODE HAVING A DOPED REGION AND METHOD FOR MANUFACTURING THE SAME simplified abstract (NEXPERIA B.V.)
- 18471463. SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (DENSO CORPORATION)
- 18471463. SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18507621. SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (DENSO CORPORATION)
- 18507621. SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18510840. NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18513624. SEMICONDUCTOR DEVICE AND FABRICATION METHOD simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18521014. SILICON CARBIDE SUBSTRATE, SILICON CARBIDE WAFER, AND SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (DENSO CORPORATION)
- 18521014. SILICON CARBIDE SUBSTRATE, SILICON CARBIDE WAFER, AND SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18582951. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME (Enkris Semiconductor, Inc.)
- 18611143. WIDE BAND GAP SEMICONDUCTOR DEVICE WITH SURFACE INSULATING FILM simplified abstract (ROHM CO., LTD.)
- 18623278. n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRIDE SEMICONDUCTOR DEVICE PRODUCTION METHOD simplified abstract (Mitsubishi Chemical Corporation)
- 18644874. STATIC RANDOM-ACCESS MEMORY (SRAM) BIT CELL WITH CHANNEL DEPOPULATION simplified abstract (Intel Corporation)
- 18652490. SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME (Samsung Electronics Co., Ltd.)
- 18663416. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE (Samsung Electronics Co., Ltd.)
- 18891861. Low Leakage FET (Murata Manufacturing Co., Ltd.)
- 18917659. EPITAXIALLY-GROWN SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD (Murata Manufacturing Co., Ltd.)
- 18965021. SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR (KABUSHIKI KAISHA TOSHIBA)
- 18975672. SEMICONDUCTOR DEVICE (Rohm Co., Ltd.)
D
I
- Intel corporation (20240222438). TRANSISTOR INCLUDING WIDE BAND GAP MATERIALS simplified abstract
- Intel corporation (20240284652). STATIC RANDOM-ACCESS MEMORY (SRAM) BIT CELL WITH CHANNEL DEPOPULATION simplified abstract
- Intel Corporation patent applications on August 22nd, 2024
- Intel Corporation patent applications on July 4th, 2024
K
- Kabushiki kaisha toshiba (20240096969). NITRIDE SEMICONDUCTOR WITH MULTIPLE NITRIDE REGIONS OF DIFFERENT IMPURITY CONCENTRATIONS, WAFER, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Kabushiki kaisha toshiba (20240313093). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240313100). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Kabushiki kaisha toshiba (20240321969). SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20250098251). SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR
- KABUSHIKI KAISHA TOSHIBA patent applications on March 20th, 2025
- KABUSHIKI KAISHA TOSHIBA patent applications on March 21st, 2024
- KABUSHIKI KAISHA TOSHIBA patent applications on September 19th, 2024
- Kabushiki Kaisha Toshiba patent applications on September 26th, 2024
M
S
- Samsung electronics co., ltd. (20240304669). 3DSFET DEVICE INCLUDING RESTRUCTURED LOWER SOURCE/DRAIN REGION HAVING INCREASED CONTACT AREA simplified abstract
- Samsung electronics co., ltd. (20250125217). SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME
- Samsung electronics co., ltd. (20250133793). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Samsung Electronics Co., Ltd. patent applications on April 17th, 2025
- Samsung Electronics Co., Ltd. patent applications on April 24th, 2025
- Samsung Electronics Co., Ltd. patent applications on September 12th, 2024
- Semiconductor energy laboratory co., ltd. (20240413166). ANALOG CIRCUIT AND SEMICONDUCTOR DEVICE
- Semiconductor Energy Laboratory Co., Ltd. patent applications on December 12th, 2024
- Sumitomo electric industries, ltd. (20240413090). SEMICONDUCTOR DEVICE
- SUMITOMO ELECTRIC INDUSTRIES, LTD. patent applications on December 12th, 2024
T
U
- US Patent Application 18163233. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract
- US Patent Application 18351149. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
- US Patent Application 18361185. IC INCLUDING STANDARD CELLS AND SRAM CELLS simplified abstract
- US Patent Application 18447470. SEMICONDUCTOR DEVICE simplified abstract