18234344. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
SEMICONDUCTOR DEVICE
Organization Name
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
Inventor(s)
Hiroki Hatada of Kanazawa Ishikawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18234344 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of various semiconductor regions, insulating film, and electrodes. The second semiconductor region contains a high-concentration boundary region in contact with the insulating film and facing the second electrode.
- First semiconductor region of a first conductivity type
- Second semiconductor region of a second conductivity type
- Third semiconductor region of the first conductivity type
- Insulating film in all regions
- Second electrode adjacent to the second region via the insulating film
- High-concentration boundary region in the second region
- Insulating film with high-concentration and low-concentration regions
- Second region with smaller thickness than the first region
Potential Applications: - Semiconductor devices - Electronics industry - Integrated circuits
Problems Solved: - Enhancing semiconductor device performance - Improving conductivity and insulation properties
Benefits: - Increased efficiency in electronic devices - Enhanced functionality of semiconductor components
Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology can be utilized in various electronic devices, leading to improved performance and functionality. It has significant implications for the semiconductor industry, particularly in the development of more efficient and reliable integrated circuits.
Questions about Semiconductor Devices: 1. How does the high-concentration boundary region in the second semiconductor region impact device performance?
- The high-concentration boundary region plays a crucial role in enhancing conductivity and insulation properties, ultimately improving the overall performance of the semiconductor device.
2. What are the potential long-term benefits of implementing this innovative semiconductor technology?
- By incorporating this technology, electronic devices can achieve higher efficiency, reliability, and functionality, leading to advancements in various industries.
Original Abstract Submitted
A semiconductor device according to an embodiment includes: a first semiconductor region of a first conductivity type disposed; a second semiconductor region of a second conductivity type disposed on the first region; a third semiconductor region of the first conductivity type disposed on the second region; an insulating film disposed in the first, second and third regions; and a second electrode disposed in the insulating film so as to be adjacent to the second region via the insulating film. The second region includes a boundary region that is in contact with the insulating film and faces the second electrode, the boundary region includes a high-concentration region, the insulating film includes a first region in contact with the high-concentration region and a second region in contact with a low-concentration region, and a thickness of the second region is smaller than a thickness of the first region.