18582951. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME (Enkris Semiconductor, Inc.)

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Organization Name

Enkris Semiconductor, Inc.

Inventor(s)

Kai Cheng of Suzhou CN

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

This abstract first appeared for US patent application 18582951 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Original Abstract Submitted

A semiconductor structure includes a substrate; and a buffer layer and a heterojunction structure layer which are disposed on the substrate sequentially, along a direction perpendicular to a direction from the substrate to the buffer layer, the buffer layer includes a plurality of ion implanted regions disposed at intervals, and the plurality of ion implanted regions include an impurity ion. The impurity ion is implanted into the buffer layer at intervals, so that different threshold voltages are formed at the heterojunction structure layer located at different positions in the buffer layer, which makes devices open gradually in a width direction of channels, to relieve decrease of a trans-conductance curve at a relatively large drain current, improving trans-conductance flatness of the devices, and further improving linearity of the devices.