SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Organization Name

kabushiki kaisha toshiba

Inventor(s)

Daimotsu Kato of Kawasaki Kanagawa (JP)

Yosuke Kajiwara of Yokohama Kanagawa (JP)

Hiroshi Ono of Setagaya Tokyo (JP)

Aya Shindome of Yokohama Kanagawa (JP)

Ikuo Fujiwara of Yokohama Kanagawa (JP)

Masahiko Kuraguchi of Yokohama Kanagawa (JP)

Tatsuo Shimizu of Shinagawa Tokyo (JP)

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240313100 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

The semiconductor device described in the abstract includes various components such as electrodes, semiconductor regions, nitride regions, and insulating members. The concentrations of different materials vary within the device.

The first semiconductor region contains AlGaN with a composition of 0 ≤ x1 < 1.
The second semiconductor region also contains AlGaN with a composition of 0 < x2 < 1, where x1 < x2.
The first nitride region contains AlGaN with a composition of 0 < z1 < 1, where x2 < z1.
The first nitride region includes a first nitride portion with a specific position.
The chlorine concentration at this position is lower than the chlorine concentration at a face of the first semiconductor region.

Potential Applications: - This semiconductor device could be used in high-frequency and high-power applications. - It may find applications in telecommunications, radar systems, and satellite communications.

Problems Solved: - The device addresses the need for efficient and reliable semiconductor components in advanced electronic systems. - It provides a solution for managing material concentrations within a semiconductor device.

Benefits: - Improved performance and stability in high-frequency applications. - Enhanced efficiency and durability in electronic systems.

Commercial Applications: Title: Advanced Semiconductor Device for High-Frequency Applications This technology could be commercialized for use in telecommunications equipment, radar systems, and satellite communication devices. The market implications include increased efficiency and reliability in electronic systems, leading to better performance in various industries.

Questions about the technology: 1. How does the composition of AlGaN in different regions of the semiconductor device affect its performance? - The composition of AlGaN in various regions influences the device's electrical properties, such as conductivity and stability. 2. What are the potential challenges in manufacturing semiconductor devices with varying material concentrations? - The manufacturing process may require precise control and calibration to ensure consistent performance across different devices.

Original Abstract Submitted

according to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. the first semiconductor region includes algan (0≤x1<1). the second semiconductor region including algan (0<x2<1, x1<x2). the first nitride region includes algan (0<z1≤1, x2<z1). the first nitride region includes a first nitride portion. the first nitride portion includes a first position. the first position is a center of the first nitride portion. the third partial region of the first semiconductor region includes a first face facing the first nitride portion. a chlorine concentration at the first position is lower than a chlorine concentration at the first face.