18917659. EPITAXIALLY-GROWN SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD (Murata Manufacturing Co., Ltd.)
EPITAXIALLY-GROWN SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Organization Name
Murata Manufacturing Co., Ltd.
Inventor(s)
Masayuki Aoike of Nagaokakyo-shi JP
EPITAXIALLY-GROWN SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
This abstract first appeared for US patent application 18917659 titled 'EPITAXIALLY-GROWN SUBSTRATE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Original Abstract Submitted
An epitaxially-grown substrate includes: a substrate made of a III-V-group compound semiconductor containing Ga or In as a III-group element; a sacrificial layer epitaxially grown on the substrate; and a semiconductor layer epitaxially grown on the sacrificial layer. The sacrificial layer includes a layer made of a mixed-crystal semiconductor containing Al or In as a III-group element, a composition ratio of Al or In varies in a thickness direction, and a location indicating a local maximum value of the composition ratio of Al or In is positioned inside other than a lower surface and an upper surface of the sacrificial layer.