Samsung electronics co., ltd. (20250133793). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250133793 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Original Abstract Submitted
a semiconductor device includes a substrate; an active pattern extending on the substrate in a first direction; a plurality of channel layers on the active pattern and spaced apart from each other in a vertical direction; a gate structure crossing the active pattern, the gate structure surrounding the plurality of channel layers and extending in a second direction orthogonal to the first direction; and source/drain patterns on a region of the active pattern on both sides of the gate structure, and having a semiconductor liner layer connected to each of side surfaces of the plurality of channel layers, and a semiconductor filling layer on the semiconductor liner layer. the semiconductor liner layer includes silicon-germanium (sige) doped with a first conductivity-type impurity. the semiconductor filling layer includes an epitaxial layer having a germanium (ge) concentration higher than that of the semiconductor liner layer, and the epitaxial layer is doped with ga.