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Category:Kevin P. O'brien of Portland OR (US)
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Pages in category "Kevin P. O'brien of Portland OR (US)"
The following 13 pages are in this category, out of 13 total.
1
- 17849207. MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICES IN AN INTERCONNECT STACK THEREOF simplified abstract (Intel Corporation)
- 17850078. SELF-ASSEMBLED MONOLAYER ON A DIELECTRIC FOR TRANSITION METAL DICHALCOGENIDE GROWTH FOR STACKED 2D CHANNELS simplified abstract (Intel Corporation)
- 17850623. STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED GROWTH simplified abstract (Intel Corporation)
- 17852016. 2D LAYERED GATE OXIDE simplified abstract (Intel Corporation)
- 17947071. FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPERATING VOLTAGE CAPABILITIES simplified abstract (Intel Corporation)
- 17956296. TECHNOLOGIES FOR PEROVSKITE TRANSISTORS simplified abstract (Intel Corporation)
- 17958094. TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract (Intel Corporation)
- 17958362. TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS simplified abstract (Intel Corporation)
I
- Intel corporation (20240105810). VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES simplified abstract
- Intel corporation (20240105822). STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEVICES simplified abstract
- Intel corporation (20240113212). TECHNOLOGIES FOR PEROVSKITE TRANSISTORS simplified abstract
- Intel corporation (20240113220). TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC simplified abstract
- Intel corporation (20240120415). TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS simplified abstract