17849207. MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICES IN AN INTERCONNECT STACK THEREOF simplified abstract (Intel Corporation)

MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICES IN AN INTERCONNECT STACK THEREOF

Organization Name

Intel Corporation

Inventor(s)

Kevin P. O'brien of Portland OR (US)

Tristan A. Tronic of Aloha OR (US)

Ande Kitamura of Portland OR (US)

Ashish Verma Penumatcha of Beaverton OR (US)

Carl Hugo Naylor of Portland OR (US)

Chelsey Dorow of Portland OR (US)

Kirby Maxey of Hillsboro OR (US)

Scott B. Clendenning of Portland OR (US)

Sudarat Lee of Hillsboro OR (US)

Uygar E. Avci of Portland OR (US)

MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICES IN AN INTERCONNECT STACK THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 17849207 titled 'MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICES IN AN INTERCONNECT STACK THEREOF

Simplified Explanation

The patent application describes a microelectronic device and a method of making it, which includes a semiconductor package and an IC device assembly. The device consists of a substrate, a front end of line (FEOL) stack with multiple transistors, and a back end of line (BEOL) stack with multiple transistors made of a transition metal dichalcogenide (TMD) material. The second transistors in the BEOL stack are used for voltage regulation to control the power supply to the device.

• The device includes a substrate, a FEOL stack, and a BEOL stack.
• The FEOL stack contains multiple transistors.
• The BEOL stack contains multiple transistors made of a TMD material.
• The TMD transistors in the BEOL stack are used for voltage regulation.
• The device is part of a semiconductor package and an IC device assembly.
• The method of making the device is also described in the patent application.

Potential applications of this technology:

• Microelectronics industry
• Semiconductor manufacturing
• Integrated circuit design and production

Problems solved by this technology:

• Efficient voltage regulation in microelectronic devices
• Improved power supply control in semiconductor packages

Benefits of this technology:

• Enhanced performance and reliability of microelectronic devices
• More efficient power management in IC device assemblies
• Potential for advancements in semiconductor manufacturing processes.

Original Abstract Submitted

A microelectronic device, a semiconductor package including the device, an IC device assembly including the package, and a method of making the device. The device includes a substrate; a first structure on the substrate, the first structure corresponding to a front end of line (FEOL) stack of the device and including a plurality of first transistors therein; and a second structure on the substrate, the second structure corresponding to a back end of line (BEOL) stack of the device, and including a plurality of second transistors therein, the plurality of second transistors including a transition metal dichalcogenide (TMD) material. The second transistors are part of a voltage regulation architecture to regulate voltage supply to the die.