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Category:G11C16/30
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Pages in category "G11C16/30"
The following 35 pages are in this category, out of 35 total.
1
- 17693571. NONVOLATILE MEMORY DEVICE AND METHOD OF DETECTING WORDLINE DEFECT OF THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17742874. NON-VOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17831266. CELL VOLTAGE DROP COMPENSATION CIRCUIT simplified abstract (Micron Technology, Inc.)
- 17852103. Detection and Isolation of Faulty Holdup Capacitors Using Hardware Circuit in Data Storage Devices simplified abstract (Western Digital Technologies, Inc.)
- 17874100. Non-Volatile Memory Power Cycle Protection Mechanism simplified abstract (Apple Inc.)
- 17881039. MEMORY DEVICE INCLUDING VERTICAL CHANNEL STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
- 17954757. CONFIGURABLE CAPACITORS WITH 3D NON-VOLATILE ARRAY simplified abstract (Western Digital Technologies, Inc.)
- 17958386. NONVOLATILE MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18050489. POWER SWITCH CIRCUIT AND NON-VOLATILE MEMORY DEVICE COMPRISING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18058555. NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18067224. NON-VOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING THE SAME, AND READ METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
- 18079433. OPERATION METHOD OF NONVOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18109338. MEMORY MODULES INCLUDING A MIRRORING CIRCUIT AND METHODS OF OPERATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18217087. CHARGE PUMP HAVING SWITCH CIRCUITS FOR BLOCKING LEAKAGE CURRENT DURING SUDDEN POWER-OFF, AND FLASH MEMORY INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18229249. SCHEDULED INTERRUPTS FOR PEAK POWER MANAGEMENT TOKEN RING COMMUNICATION simplified abstract (Micron Technology, Inc.)
- 18375048. APPARATUS WITH VOLTAGE PROTECTION MECHANISM simplified abstract (Micron Technology, Inc.)
- 18402647. METHOD AND MEMORY DEVICE WITH INCREASED READ AND WRITE MARGIN simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18455575. MEMORY SYSTEM HAVING A NON-VOLATILE MEMORY AND A CONTROLLER CONFIGURED TO SWITCH A MODE FOR CONTROLLING AN ACCESS OPERATION TO THE NON-VOLATILE MEMORY simplified abstract (Kioxia Corporation)
- 18460496. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
- 18518651. METHOD AND CIRCUIT FOR PROVIDING AUXILIARY POWER AND STORAGE DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18545888. ENHANCED GRADIENT SEEDING SCHEME DURING A PROGRAM OPERATION IN A MEMORY SUB-SYSTEM simplified abstract (Micron Technology, Inc.)
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- Samsung electronics co., ltd. (20240096427). METHOD AND CIRCUIT FOR PROVIDING AUXILIARY POWER AND STORAGE DEVICE INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240127865). CHARGE PUMP HAVING SWITCH CIRCUITS FOR BLOCKING LEAKAGE CURRENT DURING SUDDEN POWER-OFF, AND FLASH MEMORY INCLUDING THE SAME simplified abstract
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024
- SK hynix Inc. patent applications on January 18th, 2024