18050489. POWER SWITCH CIRCUIT AND NON-VOLATILE MEMORY DEVICE COMPRISING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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POWER SWITCH CIRCUIT AND NON-VOLATILE MEMORY DEVICE COMPRISING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jung Kyu Jang of Hwaseong-si (KR)

Suk-Soo Pyo of Hwaseong-si (KR)

POWER SWITCH CIRCUIT AND NON-VOLATILE MEMORY DEVICE COMPRISING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18050489 titled 'POWER SWITCH CIRCUIT AND NON-VOLATILE MEMORY DEVICE COMPRISING THE SAME

Simplified Explanation

The abstract describes a power switch circuit and a non-volatile memory device that includes this circuit. The power switch circuit has a multi-voltage providing circuit which receives a first voltage and a second voltage higher than the first voltage. It outputs a third voltage corresponding to the first voltage to a first output terminal and a fourth voltage corresponding to the second voltage to a second output terminal. The circuit also includes a leakage current prevention circuit that cuts off any leakage current flowing through the multi-voltage providing circuit. The multi-voltage providing circuit consists of a first inverter driven by the second voltage. The leakage current prevention circuit cuts off the leakage current flowing through the first inverter when both the first and second voltages are provided to the multi-voltage providing circuit.

  • The patent describes a power switch circuit and a non-volatile memory device that incorporates this circuit.
  • The power switch circuit includes a multi-voltage providing circuit that receives two different voltages and outputs corresponding voltages to different terminals.
  • A leakage current prevention circuit is included to prevent any leakage current flowing through the multi-voltage providing circuit.
  • The multi-voltage providing circuit consists of a first inverter driven by the higher voltage.
  • The leakage current prevention circuit cuts off the leakage current flowing through the first inverter when both voltages are provided.

Potential Applications

  • Non-volatile memory devices
  • Power switch circuits in electronic devices

Problems Solved

  • Leakage current in power switch circuits
  • Efficient voltage output in multi-voltage providing circuits

Benefits

  • Prevents leakage current in the circuit
  • Provides different voltage outputs based on input voltages
  • Improves efficiency and performance of power switch circuits


Original Abstract Submitted

A power switch circuit and non-volatile memory device including the same are provided. The power switch circuit includes a multi-voltage providing circuit configured to receive a first voltage and a second voltage greater than the first voltage, output a third voltage corresponding to the first voltage to a first output terminal, and output a fourth voltage corresponding to the second voltage to a second output terminal. The power switch circuit also includes a leakage current prevention circuit configured to cut off a leakage current flowing through the multi-voltage providing circuit. The multi-voltage providing circuit includes a first inverter which is driven using the second voltage. The leakage current prevention circuit is configured to cut off the leakage current flowing through the first inverter in response to both the first voltage and the second voltage being provided to the multi-voltage providing circuit.