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Category:H01L21/762
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Pages in category "H01L21/762"
The following 200 pages are in this category, out of 229 total.
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- 17838303. FIN FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17859284. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17863317. SELECTIVE CAVITY MERGING FOR ISOLATION REGIONS IN A MEMORY DIE simplified abstract (Micron Technology, Inc.)
- 17886753. SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17897201. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17900804. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17930739. GAA DEVICE WITH THE SUBSTRATE INCLUDING EMBEDDED INSULATING STRUCTURE BETWEEN BSPDN AND CHANNELS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17933187. SELF-ALIGNED BACKSIDE CONTACT MODULE FOR 3DIC APPLICATION simplified abstract (QUALCOMM Incorporated)
- 17937212. FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL simplified abstract (Intel Corporation)
- 17937431. POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY NETWORKS simplified abstract (International Business Machines Corporation)
- 17940195. BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION simplified abstract (Intel Corporation)
- 17957821. GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract (Intel Corporation)
- 17958040. SINGLE DIE REINFORCED GALVANIC ISOLATION DEVICE simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 17977250. SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF SILICON (LOCOS) simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 17986119. Finfet Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18067168. INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18079817. Selective Implantation into STI of ETSOI Device simplified abstract (Applied Materials, Inc.)
- 18133977. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18150474. Transistor Gate Structures and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18151412. METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18151792. FILM MODIFICATION FOR GATE CUT PROCESS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152477. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18153335. SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18155912. SEMICONDUCTOR DEVICE INCLUDING INSULATING STRUCTURE SURROUNDING THROUGH VIA AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18157395. STRUCTURE OF ISOLATION FEATURE OF SEMICONDUCTOR DEVICE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18162892. SEMICONDUCTOR DEVICE INCLUDING ISOLATION REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18166521. INTEGRATED CIRCUIT DEVICES INCLUDING A VERTICAL FIELD-EFFECT TRANSISTOR AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18173948. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE simplified abstract (Kioxia Corporation)
- 18199504. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18303205. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18306716. Isolation Regions For Isolating Transistors and the Methods Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18310369. SCHOTTKY BARRIER DIODE (SBD) LEAKAGE CURRENT BLOCKING STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18312811. METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18320423. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18367292. GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18383940. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING A FIN-TYPE ACTIVE REGION simplified abstract (Samsung Electronics Co., Ltd.)
- 18395192. TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION simplified abstract (Intel Corporation)
- 18401955. Shallow Trench Isolation Forming Method and Structures Resulting Therefrom simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18403495. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18404178. DEVICE OVER PHOTODETECTOR PIXEL SENSOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18416508. TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18423616. INTEGRATED CHIP AND METHOD OF FORMING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18425797. SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18432377. REPLACEMENT MATERIAL FOR BACKSIDE GATE CUT FEATURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18432694. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18433867. SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18435609. DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18444356. SEMICONDUCTOR DEVICE WITH HELMET STRUCTURE BETWEEN TWO SEMICONDUCTOR FINS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18488381. SEMICONDUCTOR DEVICE INCLUDING ISOLATION REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18488718. LARGE-AREA III-V SEMICONDUCTOR LAYER TRANSFERRING METHOD simplified abstract (ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE)
- 18516595. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITHOUT FIN END GAP simplified abstract (Intel Corporation)
- 18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518642. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18520346. REDUCING PARASITIC CAPACITANCE IN SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18520872. DEVICE LAYER INTERCONNECTS simplified abstract (Intel Corporation)
- 18520894. HIGH VOLTAGE SEMICONDUCTOR DEVICE HAVING A DEEP TRENCH INSULATION AND MANUFACTURING PROCESS simplified abstract (STMICROELECTRONICS S.r.l.)
- 18520917. SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521584. FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522265. METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18526062. Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526290. Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18526317. FinFET Device and Method of Forming Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18532619. Trench FET Device and Method of Manufacturing Trench FET Device simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
- 18536026. APPARATUSES INCLUDING SHALLOW TRENCH ISOLATION AND METHODS FOR FORMING SAME simplified abstract (Micron Technology, Inc.)
- 18543769. REDUCED ESR IN TRENCH CAPACITOR simplified abstract (Texas Instruments Incorporated)
- 18543934. Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18581561. REDUCED SEMICONDUCTOR WAFER BOW AND WARPAGE simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18584282. SOURCE/DRAIN EPITAXIAL LAYER PROFILE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18591687. SEMICONDUCTOR DEVICE INCLUDING GATE SEPARATION REGION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18595696. SEMICONDUCTOR DEVICES HAVING VARIOUSLY-SHAPED SOURCE/DRAIN PATTERNS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
2
- 20240010491. METHOD FOR MANUFACTURING A STRUCTURE COMPRISING A PLURALITY OF MEMBRANES OVERLOOKING CAVITIES simplified abstract (Soitec)
- 20240014101. MICROFLUIDIC CHANNELS SEALED WITH DIRECTIONALLY-GROWN PLUGS simplified abstract (GlobalFoundries U.S. Inc.)
- 20240021601. BCD DEVICE LAYOUT AREA DEFINED BY A DEEP TRENCH ISOLATION STRUCTURE AND METHODS FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)
- 20240040778. MEMORY STRUCTURE, SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)
- 20240047579. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
B
- Blockchain patent applications on February 1st, 2024
- Blockchain patent applications on February 8th, 2024
- Blockchain patent applications on January 11th, 2024
- Blockchain patent applications on January 18th, 2024
- Blockchain patent applications on March 14th, 2024
- Blockchain patent applications on March 28th, 2024
- Blockchain patent applications on May 16th, 2024
H
I
- Intel corporation (20240105520). TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240113105). FORMING METAL GATE CUTS USING MULTIPLE PASSES FOR DEPTH CONTROL simplified abstract
- Intel corporation (20240113107). GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract
- Intel corporation (20240136277). TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION simplified abstract
- Intel corporation (20240162332). TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240178071). DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240186403). DUAL METAL GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel Corporation patent applications on April 25th, 2024
- Intel Corporation patent applications on April 4th, 2024
- INTEL CORPORATION patent applications on February 8th, 2024
- Intel Corporation patent applications on June 6th, 2024
- Intel Corporation patent applications on March 14th, 2024
- Intel Corporation patent applications on March 28th, 2024
- Intel Corporation patent applications on May 16th, 2024
- Intel Corporation patent applications on May 30th, 2024
- International business machines corporation (20240113125). POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY NETWORKS simplified abstract
- International business machines corporation (20240128333). DIRECT BACKSIDE SELF-ALIGNED CONTACT simplified abstract
- International Business Machines Corporation patent applications on April 18th, 2024
- International Business Machines Corporation patent applications on April 4th, 2024
- International Business Machines Corporation patent applications on February 29th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 14th, 2024
M
Q
S
- Samsung electronics co., ltd. (20240113160). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240136254). INTEGRATED CIRCUIT DEVICE simplified abstract
- Samsung electronics co., ltd. (20240178068). METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING A FIN-TYPE ACTIVE REGION simplified abstract
- Samsung electronics co., ltd. (20240203988). SEMICONDUCTOR DEVICE INCLUDING GATE SEPARATION REGION simplified abstract
- Samsung electronics co., ltd. (20240204070). SEMICONDUCTOR DEVICES HAVING VARIOUSLY-SHAPED SOURCE/DRAIN PATTERNS simplified abstract
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on April 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on April 4th, 2024
- Samsung Electronics Co., Ltd. patent applications on February 29th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 20th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 20th, 2024
- Samsung Electronics Co., Ltd. patent applications on May 30th, 2024
T
- Taiwan semiconductor manufacturing co., ltd. (20240096753). SEMICONDUCTOR DEVICE INCLUDING INSULATING STRUCTURE SURROUNDING THROUGH VIA AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096883). METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096943). REDUCING PARASITIC CAPACITANCE IN SEMICONDUCTOR DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240096958). SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097033). FINFET STRUCTURE AND METHOD WITH REDUCED FIN BUCKLING simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097036). FinFET Device and Method of Forming Same simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240128120). PACKAGE STRUCTURE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240128126). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVCE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240128178). SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240162264). DEVICE OVER PHOTODETECTOR PIXEL SENSOR simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240162290). INTEGRATED CHIP AND METHOD OF FORMING THEREOF simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186180). INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE DIELECTRIC LAYER HAVING AIR GAP simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186190). Semiconductor Device and Methods of Forming the Same simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240186356). IMAGE SENSOR simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194674). SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194675). SEMICONDUCTOR DEVICE WITH HELMET STRUCTURE BETWEEN TWO SEMICONDUCTOR FINS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240194784). SOURCE/DRAIN EPITAXIAL LAYER PROFILE simplified abstract
- Taiwan Semiconductor manufacturing Co., Ltd. patent applications on April 18th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on June 13th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on June 6th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on May 16th, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240102959). INTEGRATED CIRCUIT WITH BIOFETS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105500). METHODS FOR SEAM REPAIR AND SEMICONDUCTOR STRUCTURE MANUFACTURED THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105707). Semiconductor Structures And Methods Of Forming The Same simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113112). Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113113). Semiconductor Structure Cutting Process and Structures Formed Thereby simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113164). FILM MODIFICATION FOR GATE CUT PROCESS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136220). Shallow Trench Isolation Forming Method and Structures Resulting Therefrom simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136222). Different Isolation Liners for Different Type FinFETs and Associated Isolation Feature Fabrication simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240136418). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240178052). REPLACEMENT MATERIAL FOR BACKSIDE GATE CUT FEATURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240178300). SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240178328). SCHOTTKY BARRIER DIODE (SBD) LEAKAGE CURRENT BLOCKING STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240203998). SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240204104). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240213097). SEMICONDUCTOR DEVICE HAVING CUT GATE DIELECTRIC simplified abstract
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 11th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on April 25th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 15th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on June 20th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on June 27th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on March 28th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 30th, 2024
- Texas instruments incorporated (20240112947). SHALLOW TRENCH ISOLATION (STI) PROCESSING WITH LOCAL OXIDATION OF SILICON (LOCOS) simplified abstract
- Texas instruments incorporated (20240113042). SINGLE DIE REINFORCED GALVANIC ISOLATION DEVICE simplified abstract
- TEXAS INSTRUMENTS INCORPORATED patent applications on April 4th, 2024
- Texas Instruments Incorporated patent applications on February 1st, 2024
U
- US Patent Application 17748632. Isolation Structure And A Self-Aligned Capping Layer Formed Thereon simplified abstract
- US Patent Application 17752211. SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATION THEREOF simplified abstract
- US Patent Application 17828802. METHOD OF PREPARING ACTIVE AREAS simplified abstract
- US Patent Application 18153686. Trench Isolation Connectors for Stacked Structures simplified abstract
- US Patent Application 18167024. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE simplified abstract
- US Patent Application 18181293. REDISTRIBUTION LAYER METALLIC STRUCTURE AND METHOD simplified abstract
- US Patent Application 18231912. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR PREPARING THE SAME simplified abstract
- US Patent Application 18232171. Semiconductor Device With Isolation Structures simplified abstract
- US Patent Application 18232510. VTFET WITH BURIED POWER RAILS simplified abstract
- US Patent Application 18232545. NOVEL SOI DEVICE STRUCTURE FOR ROBUST ISOLATION simplified abstract
- US Patent Application 18338759. Fin Field Effect Transistor (FinFET) Device and Method for Forming the Same simplified abstract
- US Patent Application 18346589. Structure and Method for Enhancing Robustness of ESD Device simplified abstract
- US Patent Application 18352133. Hybrid Channel Semiconductor Device and Method simplified abstract
- US Patent Application 18358464. DECOUPLING FINFET CAPACITORS simplified abstract
- US Patent Application 18358508. Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment simplified abstract
- US Patent Application 18360332. METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18360546. METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE simplified abstract
- US Patent Application 18360814. METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A DUMMY SECTION simplified abstract
- US Patent Application 18361540. Controlling Fin-Thinning Through Feedback simplified abstract
- US Patent Application 18362302. Dielectric Gap Fill simplified abstract
- US Patent Application 18362707. TRANSISTOR ISOLATION REGIONS AND METHODS OF FORMING THE SAME simplified abstract