US Patent Application 18231912. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR PREPARING THE SAME simplified abstract
Contents
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR PREPARING THE SAME
Organization Name
Inventor(s)
CHENG-HSIANG Fan of TAOYUAN CITY (TW)
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR PREPARING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18231912 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR PREPARING THE SAME
Simplified Explanation
- The patent application describes a semiconductor device structure and a method for forming it. - The purpose of the invention is to prevent the collapse of fine patterns in the semiconductor device structure. - The structure includes a first target structure and a second target structure on a semiconductor substrate. - A first spacer element is placed over the first target structure. - The topmost point of the first spacer element is positioned between the central lines of the first and second target structures in a cross-sectional view. - The invention aims to provide a solution for maintaining the integrity of fine patterns in semiconductor devices.
Original Abstract Submitted
The present disclosure provides a semiconductor device structure with fine patterns and a method for forming the semiconductor device structure, which prevents the collapse of the fine patterns. The semiconductor device structure includes a first target structure and a second target structure disposed over a semiconductor substrate. The semiconductor device structure also includes a first spacer element disposed over the first target structure, wherein a topmost point of the first spacer element is between a central line of the first target structure and a central line of the second target structure in a cross-sectional view.
