US Patent Application 18362302. Dielectric Gap Fill simplified abstract
Contents
Dielectric Gap Fill
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Dielectric Gap Fill - A simplified explanation of the abstract
This abstract first appeared for US patent application 18362302 titled 'Dielectric Gap Fill
Simplified Explanation
The patent application discusses a method for filling gaps with a dielectric material, specifically for filling trenches between fins for Shallow Trench Isolations (STIs).
- The method involves depositing a first dielectric material in a trench using an atomic layer deposition (ALD) process.
- After the first dielectric material is deposited, it is converted into a second dielectric material.
- The process can be repeated for filling another trench with the first dielectric material, and then flowing a fill dielectric material into the trench and converting it.
Original Abstract Submitted
Generally, examples are provided relating to filling gaps with a dielectric material, such as filling trenches between fins for Shallow Trench Isolations (STIs). In an embodiment, a first dielectric material is conformally deposited in a trench using an atomic layer deposition (ALD) process. After conformally depositing the first dielectric material, the first dielectric material is converted to a second dielectric material. In further examples, the first dielectric material can be conformally deposited in another trench, and a fill dielectric material can be flowed into the other trench and converted.
