US Patent Application 18360814. METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A DUMMY SECTION simplified abstract

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METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A DUMMY SECTION

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Osamu Koike of Yokohama (JP)]]

[[Category:Yutaka Kadogawa of Yokohama (JP)]]

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A DUMMY SECTION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18360814 titled 'METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A DUMMY SECTION

Simplified Explanation

The patent application describes a semiconductor device that includes various components such as a semiconductor substrate, active elements, insulating films, electrode pads, and Through Silicon VIA electrodes.

  • The semiconductor substrate has two surfaces, obverse and reverse.
  • The active elements are located on the obverse surface, leaving an area without any active elements called the element-absence area.
  • The element-absence area includes a second insulating film, a ring-shaped dummy portion, and island-shaped dummy portions.
  • The ring-shaped dummy portion and island-shaped dummy portions are made of the same material as the semiconductor substrate.
  • The top surfaces of the ring-shaped dummy portion and island-shaped dummy portions are at the same level as the top surface of the second insulating film.
  • The Through Silicon VIA electrode passes through the ring-shaped dummy portion from the reverse surface to the obverse surface, between its inner and outer edges.
  • Some island-shaped dummy portions are located inside the inner edge of the ring-shaped dummy portion.


Original Abstract Submitted

A semiconductor device includes a semiconductor substrate, active elements, first insulating film, an electrode pad, and a Through Silicon VIA electrode. The semiconductor substrate has an obverse surface and a reverse surface. The active elements define an element-absence area free of any of the active elements. The element-absence area includes a second insulating film, a ring-shaped dummy portion, and island-shaped dummy portions. The ring-shaped dummy portion and the island-shaped dummy portions are made of the same material as the semiconductor substrate. The ring-shaped dummy portion and the island-shaped dummy portions have top surfaces coplanar with a top surface of the second insulating film. The Through Silicon VIA electrode penetrates between an inner edge and an outer edge of the ring-shaped dummy portion from the reverse surface to the obverse surface. Some island-shaped dummy portions are disposed inside of the inner edge of the ring-shaped dummy portion.

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