US Patent Application 18232545. NOVEL SOI DEVICE STRUCTURE FOR ROBUST ISOLATION simplified abstract

NOVEL SOI DEVICE STRUCTURE FOR ROBUST ISOLATION

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Lin-Chen Lu of Kaohsiung City (TW)]]

[[Category:Gulbagh Singh of Tainan City (TW)]]

[[Category:Tsung-Han Tsai of Miaoli County (TW)]]

[[Category:Po-Jen Wang of Taichung City (TW)]]

NOVEL SOI DEVICE STRUCTURE FOR ROBUST ISOLATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18232545 titled 'NOVEL SOI DEVICE STRUCTURE FOR ROBUST ISOLATION

Simplified Explanation

- This patent application describes a method for achieving robust isolation in a semiconductor-on-insulator (SOI) structure. - Instead of creating a charge trap layer in specific areas, the charge trap layer is built across the interface between the insulating layer and the substrate. - The charge trap layer is formed through implantation and is present throughout and below the insulation layer. - Devices built on this SOI structure experience reduced cross-talk between them. - The uniform structure ensures robust isolation across the entire structure, not just in certain areas. - The method eliminates the need for deep trench implantation, reducing costs. - The SOI substrate consists of an active silicon layer, an oxide layer, and a charge trap layer, all stacked on top of a silicon substrate.

Original Abstract Submitted

This disclosure provides for robust isolation across the SOI structure. In contrast to forming a charge trap layer in specific areas on the structure, a charge trap layer may be built across the insulating/substrate interface. The charge trap layer may be an implantation layer formed throughout and below the insulation layer. Devices built on this SOI structure have reduced cross-talk between the devices. Due to the uniform structure, isolation is robust across the structure and not confined to certain areas. Additionally, deep trench implantation is not required to form the structure, eliminating cost. The semiconductor-on-insulator substrate may include an active silicon layer over an oxide layer. The oxide layer may be over a charge trap layer. The charge trap layer may be over a silicon substrate.