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Category:H10D64/68
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This category has the following 21 subcategories, out of 21 total.
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Pages in category "H10D64/68"
The following 30 pages are in this category, out of 30 total.
1
- 18834712. SEMICONDUCTOR DEVICE (Semiconductor Energy Laboratory Co., Ltd.)
- 18983443. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
- 18985584. Ferroelectric Capacitor, Ferroelectric Field Effect Transistor, and Method Used in Forming an Electronic Device Comprising Conductive Material and Ferroelectric Material (MICRON TECHNOLOGY, INC.)
- 18999923. EPITAXIAL SOURCE OR DRAIN STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION (Intel Corporation)
- 19000050. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH IMPROVED CAP (Intel Corporation)
- 19002858. Oxide Semiconductor Transistor Structure in 3-D Device and Methods for Forming the Same (Taiwan Semiconductor Manufacturing Company Limited)
- 19006438. LAYER STRUCTURE INCLUDING DIELECTRIC LAYER, METHODS OF MANUFACTURING THE LAYER STRUCTURE, AND ELECTRONIC DEVICE INCLUDING THE LAYER STRUCTURE (SAMSUNG ELECTRONICS CO., LTD.)
- 19008393. DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION (Intel Corporation)
- 19009221. Contacts for Semiconductor Devices and Methods of Forming the Same (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19011247. FERROELECTRIC CHANNEL FIELD EFFECT TRANSISTOR (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19018181. ELECTRONIC DEVICE (InnoLux Corporation)
I
- Innolux corporation (20250151409). ELECTRONIC DEVICE
- InnoLux Corporation patent applications on May 8th, 2025
- Intel corporation (20250126869). EPITAXIAL SOURCE OR DRAIN STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Intel corporation (20250133811). SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH IMPROVED CAP
- Intel corporation (20250142939). DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Intel Corporation patent applications on April 17th, 2025
- Intel Corporation patent applications on April 24th, 2025
- Intel Corporation patent applications on May 1st, 2025
M
S
- Samsung electronics co., ltd. (20250142936). LAYER STRUCTURE INCLUDING DIELECTRIC LAYER, METHODS OF MANUFACTURING THE LAYER STRUCTURE, AND ELECTRONIC DEVICE INCLUDING THE LAYER STRUCTURE
- Samsung Electronics Co., Ltd. patent applications on May 1st, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on May 1st, 2025
- Semiconductor energy laboratory co., ltd. (20250120179). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD. patent applications on April 10th, 2025
T
- Taiwan semiconductor manufacturing company, ltd. (20250142932). Contacts for Semiconductor Devices and Methods of Forming the Same
- Taiwan semiconductor manufacturing company, ltd. (20250151370). FERROELECTRIC CHANNEL FIELD EFFECT TRANSISTOR
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 1st, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 8th, 2025