SEMICONDUCTOR DEVICE

Organization Name

Semiconductor Energy Laboratory Co., Ltd.

Inventor(s)

Tatsuya Onuki of Atsugi, Kanagawa JP

Kiyoshi Kato of Atsugi, Kanagawa JP

Hitoshi Kunitake of Machida, Tokyo JP

Ryota Hodo of Atsugi, Kanagawa JP

Shunpei Yamazaki of Setagaya, Tokyo JP

SEMICONDUCTOR DEVICE

This abstract first appeared for US patent application 18834712 titled 'SEMICONDUCTOR DEVICE

Original Abstract Submitted

A semiconductor device that can be miniaturized or highly integrated is provided. First to second transistors share a first metal oxide over a first insulator and a first conductor over the first metal oxide; the first transistor includes a second conductor and a second insulator which are over the first metal oxide and a third conductor over the second insulator; the second transistor includes a fourth conductor and a third insulator which are over the first metal oxide and a fifth conductor over the third insulator; a side surface of the first insulator includes a portion in contact with the fourth conductor; an end portion of the fourth conductor includes a portion positioned outward from an end portion of the first insulator; the second insulator is positioned between the first conductor and the second conductor; the metal oxide and the third conductor overlap with each other with the second insulator therebetween; the third insulator is positioned between the first conductor and the fourth conductor; and the metal oxide and the fifth conductor overlap with each other with the third insulator therebetween.