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Category:H01L29/161
Subcategories
This category has the following 23 subcategories, out of 23 total.
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Pages in category "H01L29/161"
The following 83 pages are in this category, out of 83 total.
1
- 17523711. CLADDING AND CONDENSATION FOR STRAINED SEMICONDUCTOR NANORIBBONS simplified abstract (Intel Corporation)
- 17808360. SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED PFET AND BOTTOM DIELECTRIC ISOLATION NFET simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17850782. SIGE:GAB SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY simplified abstract (Intel Corporation)
- 17902111. MULTI BRIDGE CHANNEL FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17931982. FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17943751. HEIGHT CONTROL IN NANOSHEET DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17986119. Finfet Device Having A Channel Defined In A Diamond-Like Shape Semiconductor Structure simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18088890. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18110950. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18157395. STRUCTURE OF ISOLATION FEATURE OF SEMICONDUCTOR DEVICE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18227064. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18243251. METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18340440. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18378874. SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
- 18428230. METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18487177. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18491777. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (NANYA TECHNOLOGY CORPORATION)
- 18508367. GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS simplified abstract (International Business Machines Corporation)
- 18508788. MELT ANNEAL SOURCE AND DRAIN REGIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516408. Fin Loss Prevention simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18523637. NON-PLANAR INTEGRATED CIRCUIT STRUCTURES HAVING MITIGATED SOURCE OR DRAIN ETCH FROM REPLACEMENT GATE PROCESS simplified abstract (Intel Corporation)
- 18588586. SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18596461. SEMICONDUCTOR DEVICES INCLUDING PROTRUDING INSULATION PORTIONS BETWEEN ACTIVE FINS simplified abstract (Samsung Electronics Co., Ltd.)
- 18598672. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18613476. NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAIN DOPANT BLOCKING STRUCTURES INCLUDING A SUPERLATTICE simplified abstract (ATOMERA INCORPORATED)
- 18662374. DUAL SILICIDE STRUCTURE AND METHODS THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18662615. METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18742191. FLASH MEMORY DEVICE AND METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18755281. MULTI-GATE DEVICE AND RELATED METHODS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18887422. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18893294. GERMANIUM TIN GATE-ALL-AROUND DEVICE (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18955290. SEMICONDUCTOR DEVICE (Samsung Electronics Co., Ltd.)
I
- Intel corporation (20240332392). INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL simplified abstract
- Intel Corporation patent applications on October 3rd, 2024
- International business machines corporation (20240097006). GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS simplified abstract
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 14th, 2024
- International Business Machines Corporation patent applications on March 21st, 2024
S
- Samsung electronics co., ltd. (20240105776). SEMICONDUCTOR DEVICES simplified abstract
- Samsung electronics co., ltd. (20240128321). SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE simplified abstract
- Samsung electronics co., ltd. (20240203989). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240204050). SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN simplified abstract
- Samsung electronics co., ltd. (20240213317). SEMICONDUCTOR DEVICES INCLUDING PROTRUDING INSULATION PORTIONS BETWEEN ACTIVE FINS simplified abstract
- Samsung electronics co., ltd. (20240222467). METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE simplified abstract
- Samsung electronics co., ltd. (20240250186). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20250089320). SEMICONDUCTOR DEVICE
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 25th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 4th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 4th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 20th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 20th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 27th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 13th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
T
- Taiwan semiconductor manufacturing co., ltd. (20240186184). POWER REDUCTION IN FINFET STRUCTURES simplified abstract
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on June 6th, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240178224). METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240297083). DUAL SILICIDE STRUCTURE AND METHODS THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304724). METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240339547). FLASH MEMORY DEVICE AND METHOD THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240347642). MULTI-GATE DEVICE AND RELATED METHODS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379381). PERFORMING ANNEALING PROCESS TO IMPROVE FIN QUALITY OF A FINFET SEMICONDUCTOR simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20250006549). FETS and Methods of Forming FETS
- Taiwan semiconductor manufacturing company, ltd. (20250015129). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE
- Taiwan semiconductor manufacturing company, ltd. (20250015140). GERMANIUM TIN GATE-ALL-AROUND DEVICE
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on January 2nd, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 9th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 30th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on November 14th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on October 10th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on October 17th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on September 12th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on September 5th, 2024
U
- US Patent Application 17752211. SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATION THEREOF simplified abstract
- US Patent Application 18361770. SOURCE/DRAIN CONTACT FORMATION METHODS AND DEVICES simplified abstract
- US Patent Application 18363350. Different Source/Drain Profiles for N-type FinFETs and P-type FinFETs simplified abstract
- US Patent Application 18446652. NITRIDE-CONTAINING STI LINER FOR SIGE CHANNEL simplified abstract