MULTI-GATE DEVICE AND RELATED METHODS

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Shih-Hao Lin of Hsinchu (TW)

Chong-De Lien of Taoyuan City (TW)

Chih-Chuan Yang of Hsinchu (TW)

Chih-Yu Hsu of Hsinchu County (TW)

Ming-Shuan Li of Hsinchu County (TW)

Hsin-Wen Su of Hsinchu (TW)

MULTI-GATE DEVICE AND RELATED METHODS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18755281 titled 'MULTI-GATE DEVICE AND RELATED METHODS

Simplified Explanation: The patent application describes a method of fabricating a device by forming a fin with multiple semiconductor channel layers, adding a gate structure, and creating a trench in the source/drain region next to the gate structure.

The method involves providing a fin with semiconductor channel layers on a substrate.
A gate structure is formed over the fin.
A portion of the semiconductor channel layers is removed to create a trench in the source/drain region.
An adhesion layer is deposited in the trench along the sidewall surface.
A first source/drain layer is epitaxially grown over the adhesion layer in the trench.

Key Features and Innovation:

Fabricating a device with a fin structure and multiple semiconductor channel layers.
Creating a trench in the source/drain region adjacent to the gate structure.
Depositing an adhesion layer and growing a source/drain layer in the trench.

Potential Applications: This technology can be used in the semiconductor industry for manufacturing advanced devices with improved performance and efficiency.

Problems Solved: This method addresses the need for precise and controlled fabrication processes in semiconductor device manufacturing.

Benefits:

Enhanced device performance.
Increased efficiency in semiconductor fabrication.
Improved control over device structure.

Commercial Applications: The technology can be applied in the production of high-performance semiconductor devices for various electronic applications, including smartphones, computers, and other consumer electronics.

Questions about the Technology: 1. How does the method of depositing an adhesion layer contribute to the overall performance of the device? 2. What are the specific advantages of epitaxially growing the first source/drain layer in the trench?

Frequently Updated Research: Ongoing research in semiconductor fabrication techniques and materials could further enhance the efficiency and performance of devices fabricated using this method.

Original Abstract Submitted

A method of fabricating a device includes providing a fin extending from a substrate in a device type region, where the fin includes a plurality of semiconductor channel layers. In some embodiments, the method further includes forming a gate structure over the fin. Thereafter, in some examples, the method includes removing a portion of the plurality of semiconductor channel layers within a source/drain region adjacent to the gate structure to form a trench in the source/drain region. In some cases, the method further includes after forming the trench, depositing an adhesion layer within the source/drain region along a sidewall surface of the trench. In various embodiments, and after depositing the adhesion layer, the method further includes epitaxially growing a continuous first source/drain layer over the adhesion layer along the sidewall surface of the trench.