Samsung electronics co., ltd. (20240222467). METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE simplified abstract
METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Ji Young Park of Suwon-si (KR)
METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222467 titled 'METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE
Simplified Explanation:
The patent application describes a method of manufacturing an integrated circuit device by selectively forming a silicon germanium layer on a semiconductor film using a specific process gas.
- The method involves forming a structure on a substrate with exposed semiconductor and insulating films.
- A silicon germanium layer is only formed on the semiconductor film by utilizing a process gas containing a disilane compound, a germanium element-containing gas, and hydrogen gas.
Key Features and Innovation:
- Selective formation of a silicon germanium layer on the semiconductor film.
- Use of a process gas containing a disilane compound with chlorine atoms, a germanium element-containing gas, and hydrogen gas.
Potential Applications:
This technology can be applied in the manufacturing of integrated circuit devices, semiconductor devices, and electronic components.
Problems Solved:
- Efficient and precise formation of a silicon germanium layer on a semiconductor film.
- Controlled deposition process for improved device performance.
Benefits:
- Enhanced performance and functionality of integrated circuit devices.
- Cost-effective manufacturing process.
Commercial Applications:
Potential commercial applications include the production of advanced semiconductor devices, integrated circuits for electronic devices, and high-performance computing systems.
Questions about Silicon Germanium Layer Formation:
1. How does the use of a disilane compound with chlorine atoms contribute to the formation of the silicon germanium layer? 2. What are the advantages of selectively forming the silicon germanium layer only on the semiconductor film in the manufacturing process?
Original Abstract Submitted
a method of manufacturing an integrated circuit device, the method including forming a structure on a substrate, a semiconductor film and an insulating film being exposed in the structure, and selectively forming a silicon germanium layer only on the semiconductor film by using a process gas, the process gas including a disilane compound having at least two chlorine atoms, a germanium element-containing gas, and hydrogen gas.