Category:Hyeonjin Shin of Suwon-si (KR)
Hyeonjin Shin
Hyeonjin Shin from Suwon-si (KR) has applied for patents in technology areas such as H01L29/04, H01L23/522, H01L29/16 with samsung electronics co., ltd..
Patents
Pages in category "Hyeonjin Shin of Suwon-si (KR)"
The following 21 pages are in this category, out of 21 total.
1
- 17829679. WIRING INCLUDING GRAPHENE LAYER AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17949418. METHOD OF FORMING TRANSITION METAL DICHALCOGENIDE THIN FILM simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17951474. INTERCONNECT STRUCTURE INCLUDING GRAPHENE-METAL BARRIER AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17967200. TRANSISTOR INCLUDING TWO-DIMENSIONAL (2D) CHANNEL simplified abstract (Samsung Electronics Co., Ltd.)
- 18059660. ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18157478. VERTICAL TYPE TRANSISTOR, INVERTER INCLUDING THE SAME, AND VERTICAL TYPE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18167354. NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18359985. AMORPHOUS BORON NITRIDE COMPOUND, BORON NITRIDE FILM INCLUDING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE BORON NITRIDE FILM simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18414811. AMORPHOUS BORON NITRIDE FILM, SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR INCLUDING SAME, AND METHOD OF MANUFACTURING BORON NITRIDE FILM simplified abstract (Samsung Electronics Co., Ltd.)
- 18441520. FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18483058. TWO-DIMENSIONAL MATERIAL-BASED WIRING CONDUCTIVE LAYER CONTACT STRUCTURES, ELECTRONIC DEVICES INCLUDING THE SAME, AND METHODS OF MANUFACTURING THE ELECTRONIC DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18510063. SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL simplified abstract (Samsung Electronics Co., Ltd.)
- 18521994. INTERCONNECT STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18942936. BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FABRICATING THE BORON NITRIDE LAYER (SAMSUNG ELECTRONICS CO., LTD.)
- 18955290. SEMICONDUCTOR DEVICE (Samsung Electronics Co., Ltd.)
S
- Samsung electronics co., ltd. (20240162337). SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL simplified abstract
- Samsung electronics co., ltd. (20240178144). INTERCONNECT STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240186183). FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240242965). AMORPHOUS BORON NITRIDE FILM, SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR INCLUDING SAME, AND METHOD OF MANUFACTURING BORON NITRIDE FILM simplified abstract
- Samsung electronics co., ltd. (20250066950). BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FABRICATING THE BORON NITRIDE LAYER
- Samsung electronics co., ltd. (20250089320). SEMICONDUCTOR DEVICE