SOURCE/DRAIN CONTACT FORMATION METHODS AND DEVICES

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Cheng-Wei Chang of Hsinchu (TW)

Yu-Ming Huang of Tainan City (TW)

Ethan Tseng of Hsinchu (TW)

Ken-Yu Chang of Hsinchu City (TW)

Yi-Ying Liu of Hsinchu City (TW)

SOURCE/DRAIN CONTACT FORMATION METHODS AND DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18361770 titled 'SOURCE/DRAIN CONTACT FORMATION METHODS AND DEVICES

Simplified Explanation

The patent application describes a semiconductor device with specific layers and materials.

The device includes a substrate and two semiconductor fins protruding from the substrate.
An epitaxial feature connects the two semiconductor fins.
A silicide layer is placed over the epitaxial feature.
A barrier layer, made of a metal nitride, is placed over the silicide layer.
A metal layer is placed over the barrier layer.
The atomic ratio of oxygen to metal nitride at the boundary between the barrier layer and the metal layer is between 0.15 and 1.0.

Original Abstract Submitted

A semiconductor device includes a substrate, two semiconductor fins protruding from the substrate, an epitaxial feature over the two semiconductor fins and connected to the two semiconductor fins, a silicide layer over the epitaxial feature, a barrier layer over the silicide layer, and a metal layer over the barrier layer. The barrier layer includes a metal nitride. Along a boundary between the barrier layer and the metal layer, an atomic ratio of oxygen to metal nitride is about 0.15 to about 1.0.