18243251. METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Ji Young Park of Suwon-si (KR)
METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18243251 titled 'METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE
The method described in the abstract involves manufacturing an integrated circuit device by selectively forming a silicon germanium layer only on the semiconductor film using a process gas containing a disilane compound, a germanium element-containing gas, and hydrogen gas.
- Formation of a structure on a substrate with exposed semiconductor and insulating films.
- Selective formation of a silicon germanium layer on the semiconductor film using a specific process gas.
- The process gas includes a disilane compound with at least two chlorine atoms, a germanium element-containing gas, and hydrogen gas.
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Electronics industry
Problems Solved: - Precise control over the formation of silicon germanium layers - Enhanced performance of integrated circuit devices
Benefits: - Improved efficiency in manufacturing processes - Enhanced functionality of integrated circuit devices
Commercial Applications: Title: "Advanced Semiconductor Manufacturing for Enhanced Integrated Circuits" This technology can be utilized in the production of high-performance electronic devices, leading to improved market competitiveness and product quality.
Questions about the technology: 1. How does the selective formation of a silicon germanium layer impact the performance of integrated circuit devices? 2. What are the specific advantages of using a process gas containing a disilane compound and a germanium element-containing gas in semiconductor manufacturing?
Frequently Updated Research: Ongoing research focuses on optimizing the process gas composition for even more precise control over the formation of silicon germanium layers in integrated circuit devices.
Original Abstract Submitted
A method of manufacturing an integrated circuit device, the method including forming a structure on a substrate, a semiconductor film and an insulating film being exposed in the structure, and selectively forming a silicon germanium layer only on the semiconductor film by using a process gas, the process gas including a disilane compound having at least two chlorine atoms, a germanium element-containing gas, and hydrogen gas.