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- =DIRECT AIR CAPTURE CONTACTOR FOR CARBON UPTAKE, AND METHODS OF OPERATING THE SAME= [[:Category:Heirloom Carbon Technologies, Inc.|Heirloom Carbon Technologies, Inc.]]4 KB (701 words) - 10:16, 11 January 2024
- =CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIAL= ==CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIAL - A simplified explanation of5 KB (658 words) - 04:10, 16 April 2024
- =ENERGY AND CARBON ACCOUNTING IN ELECTRONIC DEVICES= ==ENERGY AND CARBON ACCOUNTING IN ELECTRONIC DEVICES - A simplified explanation of the abstract4 KB (547 words) - 06:48, 11 December 2023
- =IN-SITU CARBON LINER FOR HIGH ASPECT RATIO FEATURES= ==IN-SITU CARBON LINER FOR HIGH ASPECT RATIO FEATURES - A simplified explanation of the abst4 KB (626 words) - 04:59, 25 March 2024
- =METHOD OF FORMING CARBON-BASED SPACER FOR EUV PHOTORESIST PATTERNS= ==METHOD OF FORMING CARBON-BASED SPACER FOR EUV PHOTORESIST PATTERNS - A simplified explanation of the4 KB (631 words) - 18:40, 1 January 2024
- =Glassy Carbon Shutter Disk For Physical Vapor Deposition (PVD) Chamber= ==Glassy Carbon Shutter Disk For Physical Vapor Deposition (PVD) Chamber - A simplified exp4 KB (604 words) - 04:57, 25 March 2024
- =METHODS FOR DEPOSITING CARBON CONDUCTING FILMS BY ATOMIC LAYER DEPOSITION= ==METHODS FOR DEPOSITING CARBON CONDUCTING FILMS BY ATOMIC LAYER DEPOSITION - A simplified explanation of t3 KB (415 words) - 04:14, 26 April 2024
Page text matches
- =SILICON-AND-CARBON-CONTAINING MATERIALS WITH LOW DIELECTRIC CONSTANTS= ==SILICON-AND-CARBON-CONTAINING MATERIALS WITH LOW DIELECTRIC CONSTANTS - A simplified explanati2 KB (256 words) - 14:57, 11 November 2023
- =LOW TEMPERATURE CARBON GAPFILL= ==LOW TEMPERATURE CARBON GAPFILL - A simplified explanation of the abstract==2 KB (324 words) - 14:57, 11 November 2023
- =METHODS FOR DEPOSITING CARBON CONDUCTING FILMS BY ATOMIC LAYER DEPOSITION= ==METHODS FOR DEPOSITING CARBON CONDUCTING FILMS BY ATOMIC LAYER DEPOSITION - A simplified explanation of t3 KB (415 words) - 04:14, 26 April 2024
- =METHODS AND APPARATUS FOR INTEGRATING CARBON NANOFIBER INTO SEMICONDUCTOR DEVICES USING W2W FUSION BONDING= ==METHODS AND APPARATUS FOR INTEGRATING CARBON NANOFIBER INTO SEMICONDUCTOR DEVICES USING W2W FUSION BONDING - A simplifie2 KB (239 words) - 07:55, 2 November 2023
- =METHODS AND APPARATUS FOR INTEGRATING CARBON NANOFIBER INTO SEMICONDUCTOR DEVICES USING W2W FUSION BONDING= ==METHODS AND APPARATUS FOR INTEGRATING CARBON NANOFIBER INTO SEMICONDUCTOR DEVICES USING W2W FUSION BONDING - A simplifie2 KB (252 words) - 07:55, 2 November 2023
- =METHOD OF FORMING CARBON-BASED SPACER FOR EUV PHOTORESIST PATTERNS= ==METHOD OF FORMING CARBON-BASED SPACER FOR EUV PHOTORESIST PATTERNS - A simplified explanation of the4 KB (631 words) - 18:40, 1 January 2024
- =IN-SITU CARBON LINER FOR HIGH ASPECT RATIO FEATURES= ==IN-SITU CARBON LINER FOR HIGH ASPECT RATIO FEATURES - A simplified explanation of the abst4 KB (626 words) - 04:59, 25 March 2024
- =ENERGY AND CARBON ACCOUNTING IN ELECTRONIC DEVICES= ==ENERGY AND CARBON ACCOUNTING IN ELECTRONIC DEVICES - A simplified explanation of the abstract4 KB (547 words) - 06:48, 11 December 2023
- ...ces or other applications, including materials with aligned fibers such as carbon fibers and a metal such as solder. * Aligned fibers, such as carbon fibers, are used in combination with metals like solder to create thermally3 KB (458 words) - 01:53, 19 February 2024
- =CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIAL= ==CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIAL - A simplified explanation of5 KB (658 words) - 04:10, 16 April 2024
- * One of the compositions is carbon-doped silicon nitride with a higher carbon content than the other compositions. ...ride having at least 0.5 atomic percent more carbon than atomic percent of carbon, if any, in the silicon nitride of another of the individual different comp3 KB (413 words) - 05:57, 4 December 2023
- =Glassy Carbon Shutter Disk For Physical Vapor Deposition (PVD) Chamber= ==Glassy Carbon Shutter Disk For Physical Vapor Deposition (PVD) Chamber - A simplified exp4 KB (604 words) - 04:57, 25 March 2024
- =DIRECT AIR CAPTURE CONTACTOR FOR CARBON UPTAKE, AND METHODS OF OPERATING THE SAME= [[:Category:Heirloom Carbon Technologies, Inc.|Heirloom Carbon Technologies, Inc.]]4 KB (701 words) - 10:16, 11 January 2024
- - The hard mask layer includes an amorphous carbon layer (ACL). - The cleavage relief layer includes a spin-on carbon (SOC) layer.2 KB (389 words) - 06:44, 4 December 2023
- - The interfacial regions are doped with carbon and/or boron. - The insulative structures have a lower concentration of carbon and/or boron compared to the interfacial regions.3 KB (401 words) - 05:56, 4 December 2023
- ...conductor device described in the abstract includes a first electrode with carbon, an anti-oxidation layer, a barrier layer with oxide, a variable resistance * First electrode with carbon3 KB (400 words) - 08:14, 24 May 2024
- ...por Deposition (PVD) Chamber ([[Applied Materials, Inc. (17950046). Glassy Carbon Shutter Disk For Physical Vapor Deposition (PVD) Chamber simplified abstrac ...HIGH ASPECT RATIO FEATURES ([[Applied Materials, Inc. (17949083). IN-SITU CARBON LINER FOR HIGH ASPECT RATIO FEATURES simplified abstract|17949083]])===6 KB (672 words) - 08:06, 27 March 2024
- ...ductor device described in the abstract consists of a first electrode with carbon, an anti-oxidation layer on the first electrode, a barrier layer with oxide * First electrode with carbon3 KB (434 words) - 02:04, 24 May 2024
- ...MENT OF SILICON-CONTAINING MATERIAL ([[Applied Materials, Inc. (17960569). CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIAL simplified abstract|17960569]]5 KB (587 words) - 11:04, 16 April 2024
- ...ating tiers and a lower portion with a lowest insulator tier made of solid carbon and nitrogen-containing material. ...taining material. An immediately-adjacent tier is directly above the solid carbon and nitrogen-containing material of the lowest insulator tier. The immediat3 KB (372 words) - 17:26, 10 November 2023