US Patent Application 18052813. METHODS OF FORMING PATTERNS USING HARD MASK simplified abstract
Contents
METHODS OF FORMING PATTERNS USING HARD MASK
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METHODS OF FORMING PATTERNS USING HARD MASK - A simplified explanation of the abstract
This abstract first appeared for US patent application 18052813 titled 'METHODS OF FORMING PATTERNS USING HARD MASK
Simplified Explanation
- The patent application describes a method of forming patterns on a target layer. - A hard mask layer is formed on the target layer. - A cleavage relief layer is coated on the hard mask layer to fill cleavages generated in the hard mask layer. - Photoresist patterns are formed on the cleavage relief layer. - Portions of the cleavage relief layer and portions of the hard mask layer are removed using the photoresist patterns as a first etch mask to form hard mask patterns. - Portions of the target layer are removed using the hard mask patterns as a second etch mask to form target layer patterns. - The hard mask patterns are then removed. - The hard mask layer includes an amorphous carbon layer (ACL). - The cleavage relief layer includes a spin-on carbon (SOC) layer.
Original Abstract Submitted
A method of forming patterns includes: forming a hard mask layer on a target layer, coating a cleavage relief layer on the hard mask layer to fill cleavages generated in the hard mask layer, forming photoresist patterns on the cleavage relief layer, removing portions of the cleavage relief layer and portions of the hard mask layer using the photoresist patterns as a first etch mask to form hard mask patterns, removing portions of the target layer using the hard mask patterns as a second etch mask to form target layer patterns, and removing the hard mask patterns. The hard mask layer includes an amorphous carbon layer (ACL), and the cleavage relief layer includes a spin-on carbon (SOC) layer.
