17839809. METHOD OF FORMING CARBON-BASED SPACER FOR EUV PHOTORESIST PATTERNS simplified abstract (Applied Materials, Inc.)

METHOD OF FORMING CARBON-BASED SPACER FOR EUV PHOTORESIST PATTERNS

Organization Name

Applied Materials, Inc.

Inventor(s)

Xinke Wang of Singapore (SG)

Zeqing Shen of San Jose CA (US)

Susmit Singha Roy of Campbell CA (US)

Abhijit Basu Mallick of Sunnyvale CA (US)

Bhaskar Jyoti Bhuyan of San Jose CA (US)

Jiecong Tang of Singapore (SG)

John Sudijono of Singapore (SG)

Mark Saly of Santa Clara CA (US)

METHOD OF FORMING CARBON-BASED SPACER FOR EUV PHOTORESIST PATTERNS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17839809 titled 'METHOD OF FORMING CARBON-BASED SPACER FOR EUV PHOTORESIST PATTERNS

Simplified Explanation

The patent application describes methods for depositing a conformal carbon-containing spacer layer on a patterned surface and substrate. The carbon-containing film acts as a spacer to reduce the critical dimension (CD) and can also serve as an etch protection layer or an etch resistance layer for the sidewall of nanostructures.

• Flow a first precursor over a patterned surface and substrate to form an initial carbon-containing film
• Remove the first precursor effluent from the substrate
• Flow a second precursor over the substrate to react with the initial carbon-containing film
• Remove the second precursor effluent from the substrate
• Etch the substrate to remove a portion of the carbon-containing film and expose the top surface of the patterned surface and substrate between the patterned surfaces
• The carbon-containing film can act as a liner material when no etch is performed

Potential applications of this technology:

• Semiconductor manufacturing
• Nanotechnology
• Microelectronics

Problems solved by this technology:

• Provides a method for depositing a conformal carbon-containing spacer layer on a patterned surface and substrate
• Reduces the critical dimension (CD) of nanostructures
• Acts as an etch protection layer or an etch resistance layer for the sidewall of nanostructures

Benefits of this technology:

• Enables precise control of critical dimensions in nanostructures
• Provides improved etch protection for sidewalls
• Enhances the performance and reliability of semiconductor devices

Original Abstract Submitted

Methods of depositing a conformal carbon-containing spacer layer are described. Exemplary processing methods may include flowing a first precursor over a patterned surface and a substrate to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the substrate. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces. The patterned surface may be an EUV photoresist pattern, and the carbon-containing film may be formed on the sidewall and act as a spacer to reduce the critical dimension (CD). The carbon-containing film may act as an etch protection layer or an etch resistance layer for the sidewall of the nanostructures. When no etch is performed, the carbon-containing film may act as a liner material.