Micron technology, inc. (20240124977). METHODS FOR DEPOSITING CARBON CONDUCTING FILMS BY ATOMIC LAYER DEPOSITION simplified abstract

From WikiPatents
Jump to navigation Jump to search

METHODS FOR DEPOSITING CARBON CONDUCTING FILMS BY ATOMIC LAYER DEPOSITION

Organization Name

micron technology, inc.

Inventor(s)

Jean-Sebastien Materne Lehn of Boise ID (US)

METHODS FOR DEPOSITING CARBON CONDUCTING FILMS BY ATOMIC LAYER DEPOSITION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240124977 titled 'METHODS FOR DEPOSITING CARBON CONDUCTING FILMS BY ATOMIC LAYER DEPOSITION

Simplified Explanation

The patent application describes methods, systems, and devices for depositing carbon conducting films by atomic layer deposition. A device is used to react a first precursor with a base material to form a carbon compound on a material, where the first precursor includes at least one germanium, silicon, or tin. Subsequently, a second, carbon-containing precursor is reacted with the carbon compound to form a layer on the base material.

  • Simplified Explanation:

- Device deposits carbon conducting films using atomic layer deposition. - First precursor reacts with base material to form carbon compound. - Second precursor reacts with carbon compound to form layer on base material.

      1. Potential Applications:

The technology can be used in the production of electronic devices, such as transistors, sensors, and solar cells, where thin carbon conducting films are required.

      1. Problems Solved:

1. Provides a precise method for depositing thin carbon conducting films. 2. Enables the integration of carbon-based materials in electronic devices.

      1. Benefits:

1. Improved performance of electronic devices. 2. Enhanced durability and stability of carbon conducting films.

      1. Potential Commercial Applications:
        1. Electronic Device Manufacturing with Carbon Conducting Films

This section discusses the potential commercial applications of the technology in various industries, focusing on electronic device manufacturing.

      1. Possible Prior Art:

There may be prior art related to atomic layer deposition techniques for depositing thin films, but specific examples related to the deposition of carbon conducting films with germanium, silicon, or tin precursors may be limited.


Original Abstract Submitted

methods, systems, and devices for depositing carbon conducting films by atomic layer deposition are described. for instance, a device may react a first precursor with a base material to form a carbon compound on a material, where the first precursor is an acetylene, a diacetylene, a tri-acetylene, a polyacetylene, an alkene, or an arene and includes at least one germanium, silicon, or tin. additionally, the device may react a second, carbon-containing precursor with the carbon compound to form a layer on the base material.

Retrieved from "http://wikipatents.org/index.php?title=Micron_technology,_inc._(20240124977)._METHODS_FOR_DEPOSITING_CARBON_CONDUCTING_FILMS_BY_ATOMIC_LAYER_DEPOSITION_simplified_abstract&oldid=56854"