17949083. IN-SITU CARBON LINER FOR HIGH ASPECT RATIO FEATURES simplified abstract (Applied Materials, Inc.)
Contents
- 1 IN-SITU CARBON LINER FOR HIGH ASPECT RATIO FEATURES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 IN-SITU CARBON LINER FOR HIGH ASPECT RATIO FEATURES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
IN-SITU CARBON LINER FOR HIGH ASPECT RATIO FEATURES
Organization Name
Inventor(s)
Hailong Zhou of San Jose CA (US)
Iljo Kwak of Santa Clara CA (US)
Olivier P. Joubert of Meylan (FR)
IN-SITU CARBON LINER FOR HIGH ASPECT RATIO FEATURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17949083 titled 'IN-SITU CARBON LINER FOR HIGH ASPECT RATIO FEATURES
Simplified Explanation
The abstract describes a method of semiconductor processing involving etching a feature in a substrate and forming a carbon-containing material on the substrate in the same chamber.
- Etching a first portion of a feature in a substrate within a semiconductor processing chamber
- Providing a carbon-containing precursor to the chamber
- Generating plasma effluents of the carbon-containing precursor
- Contacting the substrate with the plasma effluents to form a carbon-containing material
- The carbon-containing material lines the first portion of the feature extending through layers of material on the substrate
Potential Applications
This technology could be applied in the manufacturing of semiconductor devices, such as integrated circuits and memory chips.
Problems Solved
This method helps in creating precise features on semiconductor substrates by forming a carbon-containing material that can protect the substrate during the etching process.
Benefits
- Improved precision in semiconductor processing - Enhanced protection of substrate during etching - Potential for increased efficiency in manufacturing processes
Potential Commercial Applications
"Semiconductor Processing Method for Carbon-Containing Material Formation" could find applications in the semiconductor industry for the production of advanced electronic devices.
Possible Prior Art
Prior methods of semiconductor processing may have involved using different materials for protection during etching processes, but the specific use of a carbon-containing material in the same chamber for this purpose may be novel.
Unanswered Questions
How does this method compare to traditional semiconductor processing techniques?
This article does not provide a direct comparison between this method and traditional semiconductor processing techniques. It would be interesting to know the specific advantages or disadvantages of using a carbon-containing material in the same chamber for substrate protection during etching.
What are the potential challenges or limitations of implementing this technology on an industrial scale?
The article does not address the potential challenges or limitations of implementing this technology on an industrial scale. Understanding the scalability and practicality of this method in large-scale semiconductor manufacturing processes would be crucial for its adoption in the industry.
Original Abstract Submitted
Exemplary methods of semiconductor processing may include etching a first portion of a feature in a substrate disposed within a processing region of a semiconductor processing chamber. The first portion of the feature may at least partially extend through one or more layers of material formed on the substrate. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include generating plasma effluents of the carbon-containing precursor. The methods may include contacting the substrate with the plasma effluents of the carbon-containing precursor. The methods may include forming a carbon-containing material on the substrate. The carbon-containing material may line the first portion of the feature at least partially extending through the one or more layers of material formed on the substrate. The carbon-containing material may be formed in the same chamber where the feature is etched.
