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Category:H01L21/266
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This category has the following 26 subcategories, out of 26 total.
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Pages in category "H01L21/266"
The following 68 pages are in this category, out of 68 total.
1
- 18110778. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18147644. FABRICATION OF NOVEL DEVICES USING ION BEAMS simplified abstract (Intel Corporation)
- 18157054. METHOD OF MODULATING MULTI-GATE DEVICE CHANNELS AND STRUCTURES THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18179059. SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18179059. SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)
- 18378688. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
- 18395660. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18431693. SEMICONDUCTOR DEVICE simplified abstract (Rohm Co., Ltd.)
- 18477916. SEMICONDUCTOR DEVICE WITH GATE ELECTRODE HAVING OPPOSITE TYPE DOPING AT DRAIN END AND SOURCE END INCLUDING A SELF-ALIGNED DWELL IMPLANT (TEXAS INSTRUMENTS INCORPORATED)
- 18494401. ISOLATION OF P-GAN HEMT BY USE OF GATE RING (STMicroelectronics International N.V.)
- 18496227. METHOD FOR FORMING A REDUCED SIZE FEATURE (NXP USA, Inc.)
- 18496697. INTEGRATED CIRCUIT (IC) WITH CORRUGATED CHANNEL STRUCTURE (TEXAS INSTRUMENTS INCORPORATED)
- 18528998. METHOD OF MEASURING OVERLAY AND SEMICONDUCTOR DEVICE MANUFACTURED USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18625651. REDUCE WELL DOPANT LOSS IN FINFETS THROUGH CO-IMPLANTATION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18625798. SEMICONDUCTOR DEVICE WITH DOPED REGION BETWEEN GATE AND DRAIN simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18649460. SEMICONDUCTOR DEVICE, RELATED CIRCUIT, CHIP, ELECTRONIC DEVICE, AND PREPARATION METHOD simplified abstract (Huawei Digital Power Technologies Co., Ltd.)
- 18667347. TWO-ROTATION GATE-EDGE DIODE LEAKAGE REDUCTION FOR MOS simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18669766. SWITCHING DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (DENSO CORPORATION)
- 18811693. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE (Mitsubishi Electric Corporation)
- 18910885. METHOD FOR MANUFACTURING A VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE AND CORRESPONDING VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE (Robert Bosch GmbH)
- 18917674. MOSFET TRANSISTOR WITH AN IMPROVED BODY STRUCTURE TO INCREASE THE ROBUSTNESS AND RELATED MANUFACTURING PROCESS (STMicroelectronics International N.V.)
- 18974295. SEMICONDUCTOR STRUCTURE WITH AIR GAP AND METHOD SEALING THE AIR GAP (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18984095. SEMICONDUCTOR DEVICE HAVING A DOPED FIN WELL (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18999183. FINFET Device and Method of Forming Same (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 19002309. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE (Semiconductor Energy Laboratory Co., Ltd.)
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- Mitsubishi electric corporation (20240258306). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Mitsubishi electric corporation (20250151299). SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Mitsubishi Electric Corporation patent applications on August 1st, 2024
- Mitsubishi Electric Corporation patent applications on May 8th, 2025
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- Taiwan semiconductor manufacturing co., ltd. (20240249944). REDUCE WELL DOPANT LOSS IN FINFETS THROUGH CO-IMPLANTATION simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240250170). SEMICONDUCTOR DEVICE WITH DOPED REGION BETWEEN GATE AND DRAIN simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20250105054). SEMICONDUCTOR STRUCTURE WITH AIR GAP AND METHOD SEALING THE AIR GAP
- Taiwan semiconductor manufacturing co., ltd. (20250120146). SEMICONDUCTOR DEVICE HAVING A DOPED FIN WELL
- Taiwan semiconductor manufacturing co., ltd. (20250126821). FINFET Device and Method of Forming Same
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on April 10th, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on April 17th, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on July 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 27th, 2025
- Taiwan semiconductor manufacturing company, ltd. (20240105751). SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240105851). SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113198). METHOD OF MODULATING MULTI-GATE DEVICE CHANNELS AND STRUCTURES THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240282582). METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379357). IMPLANTATION MASK FORMATION simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20250062119). SEMICONDUCTOR BURIED LAYER
- Taiwan semiconductor manufacturing company, ltd. (20250062127). METHOD OF IMPLANTING SEMICONDUCTOR DONOR SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR-ON-INSULATOR STRUCTURE
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on August 22nd, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 20th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on March 28th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on November 14th, 2024
- Texas instruments incorporated (20250113585). SEMICONDUCTOR DEVICE WITH GATE ELECTRODE HAVING OPPOSITE TYPE DOPING AT DRAIN END AND SOURCE END INCLUDING A SELF-ALIGNED DWELL IMPLANT
- Texas instruments incorporated (20250140560). INTEGRATED CIRCUIT (IC) WITH CORRUGATED CHANNEL STRUCTURE
- TEXAS INSTRUMENTS INCORPORATED patent applications on April 3rd, 2025
- Texas Instruments Incorporated patent applications on February 6th, 2025
- TEXAS INSTRUMENTS INCORPORATED patent applications on January 23rd, 2025
- TEXAS INSTRUMENTS INCORPORATED patent applications on May 1st, 2025