Taiwan semiconductor manufacturing company, ltd. (20250062119). SEMICONDUCTOR BURIED LAYER
SEMICONDUCTOR BURIED LAYER
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Hung-Chih Yu of Hsinchu City (TW)
SEMICONDUCTOR BURIED LAYER
This abstract first appeared for US patent application 20250062119 titled 'SEMICONDUCTOR BURIED LAYER
Original Abstract Submitted
in a semiconductor manufacturing method, a mask is disposed on a semiconductor layer or semiconductor substrate. the semiconductor layer or semiconductor substrate is etched in an area delineated by the mask to form a cavity. with the mask disposed on the semiconductor layer or semiconductor substrate, the cavity is lined to form a containment structure. with the mask disposed on the semiconductor layer or semiconductor substrate, the containment structure is filled with a base semiconductor material. after filling the containment structure with the base semiconductor material, the mask is removed. at least one semiconductor device is fabricated in and/or on the base semiconductor material deposited in the containment structure.