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Category:G11C11/4097
Subcategories
This category has the following 7 subcategories, out of 7 total.
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Pages in category "G11C11/4097"
The following 61 pages are in this category, out of 61 total.
1
- 17953715. MEMORY DEVICE HAVING ROW DECODER ARRAY ARCHITECTURE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17958386. NONVOLATILE MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18045846. SENSE AMPLIFIER CIRCUIT, MEMORY DEVICE INCLUDING THE SAME AND SENSING METHOD OF MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18381115. MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18388769. MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL simplified abstract (Micron Technology, Inc.)
- 18415023. Integrated Assemblies simplified abstract (Micron Technology, Inc.)
- 18451077. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND MEMORY simplified abstract (CHANGXIN MEMORY TECHNOLOGIES, INC.)
- 18499934. LOCAL DIGIT LINE (LDL) COUPLING CANCELLATION simplified abstract (Micron Technology, Inc.)
- 18581018. NONVOLATILE MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18591935. MEMORY DEVICE simplified abstract (SK hynix Inc.)
- 18746339. APPARATUSES AND METHODS FOR SINGLE AND MULTI MEMORY CELL ARCHITECTURES (MICRON TECHNOLOGY, INC.)
- 18746447. APPARATUSES AND METHODS FOR SINGLE AND MULTI MEMORY CELL ARCHITECTURES (MICRON TECHNOLOGY, INC.)
- 18746473. APPARATUSES AND METHODS FOR SINGLE AND MULTI MEMORY CELL ARCHITECTURES (MICRON TECHNOLOGY, INC.)
- 18746974. BIT LINE SENSE AMPLIFIER AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18749464. SEMICONDUCTOR DEVICE HAVING ARRAY CONTROL CIRCUIT CONTROLLING SENSE AMPLIFIERS (Micron Technology, Inc.)
- 18768111. MEMORY DEVICE AND SEMICONDUCTOR DEVICE (Semiconductor Energy Laboratory Co., Ltd.)
- 18972079. MEMORY DEVICE HAVING ROW DECODER ARRAY ARCHITECTURE (SAMSUNG ELECTRONICS CO., LTD.)
M
- Micron technology, inc. (20240161812). Integrated Assemblies simplified abstract
- Micron technology, inc. (20240194251). LOCAL DIGIT LINE (LDL) COUPLING CANCELLATION simplified abstract
- Micron technology, inc. (20240196604). MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL simplified abstract
- Micron technology, inc. (20240290374). MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS simplified abstract
- Micron technology, inc. (20240290375). MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS simplified abstract
- Micron technology, inc. (20250069647). SEMICONDUCTOR DEVICE HAVING ARRAY CONTROL CIRCUIT CONTROLLING SENSE AMPLIFIERS
- Micron technology, inc. (20250118352). APPARATUSES AND METHODS FOR SINGLE AND MULTI MEMORY CELL ARCHITECTURES
- Micron technology, inc. (20250118353). APPARATUSES AND METHODS FOR SINGLE AND MULTI MEMORY CELL ARCHITECTURES
- Micron technology, inc. (20250118358). APPARATUSES AND METHODS FOR SINGLE AND MULTI MEMORY CELL ARCHITECTURES
- MICRON TECHNOLOGY, INC. patent applications on April 10th, 2025
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on February 20th, 2025
- Micron Technology, Inc. patent applications on February 27th, 2025
- MICRON TECHNOLOGY, INC. patent applications on January 25th, 2024
- Micron Technology, Inc. patent applications on June 13th, 2024
- Micron Technology, Inc. patent applications on June 6th, 2024
- Micron Technology, Inc. patent applications on March 6th, 2025
- Micron Technology, Inc. patent applications on May 16th, 2024
S
- Samsung electronics co., ltd. (20240105254). SENSE AMPLIFIER, OPERATING METHOD THEREOF, AND VOLATILE MEMORY DEVICE INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240161810). MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240194243). NONVOLATILE MEMORY DEVICES simplified abstract
- Samsung electronics co., ltd. (20240292600). MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240339153). BIT LINE SENSE AMPLIFIER AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240404586). VOLATILE MEMORY DEVICE
- Samsung electronics co., ltd. (20250104764). MEMORY DEVICE HAVING ROW DECODER ARRAY ARCHITECTURE
- Samsung Electronics Co., Ltd. patent applications on August 29th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on August 29th, 2024
- Samsung Electronics Co., Ltd. patent applications on December 5th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 13th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 13th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 27th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 27th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 28th, 2024
- Samsung Electronics Co., Ltd. patent applications on May 16th, 2024
- Samsung Electronics Co., Ltd. patent applications on October 10th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on October 10th, 2024
- Semiconductor energy laboratory co., ltd. (20250014615). MEMORY DEVICE AND SEMICONDUCTOR DEVICE
- Semiconductor Energy Laboratory Co., Ltd. patent applications on January 9th, 2025
- SK hynix Inc. patent applications on February 20th, 2025
- SK hynix Inc. patent applications on January 30th, 2025